P4C1023 PYRAMID [Pyramid Semiconductor Corporation], P4C1023 Datasheet - Page 2
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P4C1023
Manufacturer Part Number
P4C1023
Description
LOW POWER 128K x 8 SINGLE CHIP ENABLE CMOS STATIC RAM
Manufacturer
PYRAMID [Pyramid Semiconductor Corporation]
Datasheet
1.P4C1023.pdf
(11 pages)
Document # SRAM126 REV OR
MAXIMUM RATINGS
Stresses greater than those listed can cause permanent damage to the device. These are absolute stress ratings only.
Functional operation of the device is not implied at these or any other conditions in excess of those given in the opera-
tional sections of this data sheet. Exposure to Maximum Ratings for extended periods can adversely affect device
reliability.
RECOMMENDED OPERATING TEMPERATURE & SUPPLY VOLTAGE
DC ELECTRICAL CHARACTERISTICS
(Over Recommended Operating Temperature & Supply Voltage)
Commercial (0°C to 70°C)
Industrial (-40°C to 85°C)
Military (-55°C to 125°C)
V
T
S
I
I
V
OUT
LAT
Symbol
A
Symbol
TERM
TG
CC
V
V
P4C1023/P4C1023L
I
V
V
I
I
I
SB1
LO
SB
OH
LI
OL
IH
IL
Temperature Range (Ambient)
Output High Voltage
(I/O
Output Low Voltage
(I/O
Input High Voltage
Input Low Voltage
Input Leakage Current
Output Leakage Current
V
CMOS Standby Current
(CMOS Input Levels)
Supply Voltage with Respect to GND
Terminal Voltage with Respect to GND (up to 7.0V)
Operating Ambient Temperature
Storage Temperature
Output Current into Low Outputs
Latch-up Current
V
TTL Standby Current
(TTL Input Levels)
CC
CC
0
0
Current
Current
Parameter
- I/O
- I/O
7
7
)
)
Parameter
GND
GND
CE
I
I
V
CE
V
CE
OH
OL
CC
CC
1
1
= 2.1mA
1
= –1mA, V
= 5.5V, I
= V
= 5.5V, I
Test Conditions
V
V
V
V
IH
IH
CC
IN
OUT
or CE
or CE
-0.2V, CE
OUT
V
OUT
CC
CC
V
2
2
= 0 mA
CC
= 0 mA
= 4.5V
= V
V
2
IL
IL
0.2V
Industrial
Industrial
Comm.
Military
Comm.
Military
4.5V
4.5V
4.5V
Supply Voltage
>200
Min
-0.5
-0.5
-55
-65
V
V
V
CC
CC
CC
-0.3
Min
2.4
2.2
-10
-10
-2
-5
-2
-5
5.5V
5.5V
5.5V
V
V
CC
Max
125
150
CC
7.0
25
+10
+10
Max
+ 0.5
100
0.4
0.8
+2
+5
+2
+5
+ 0.3
3
Page 2 of 11
Unit
Unit
mA
mA
mA
µA
µA
µA
°C
°C
V
V
V
V
V
V