P4C1023 PYRAMID [Pyramid Semiconductor Corporation], P4C1023 Datasheet - Page 3

• Manufacturer Part Number: P4C1023
• Description: LOW POWER 128K x 8 SINGLE CHIP ENABLE CMOS STATIC RAM
• Manufacturer: PYRAMID [Pyramid Semiconductor Corporation]

Document # SRAM126 REV OR
CAPACITANCES
(V
Note 1 -
AC ELECTRICAL CHARACTERISTICS - READ CYCLE
(Over Recommended Operating Temperature & Supply Voltage)
POWER DISSIPATION CHARACTERISTICS VS. SPEED
Symbol
Symbol
CC
The device is continuously enabled for writing, i.e., CE
inputs are 0V and 3V.
t
t
t
t
t
t
t
t
t
t
= 5.0V, T
t
OHZ
OLZ
RC
AC
OH
OE
PU
PD
AA
LZ
HZ
I
CC
Symbol
C
C
Tested with outputs open and all address and data inputs changing at the maximum write-cycle rate.
OUT
IN
Address Access Time
Read Cycle Time
Chip Enable Access
Time
Output Hold from
Address Change
Chip Enable to
Output in Low Z
Chip Disable to
Output in High Z
Output Enable Low
to Data Valid
Output Enable Low to
Low Z
Output Enable High
to High Z
Chip Enable to Power
Up Time
Chip Disable to
Power Down Time
A
= 25°C, f = 1.0 MHz)
Dynamic Operating Current
Parameter
(4)
Output Capacitance
Parameter
Input Capacitance
Parameter
Min
Temperature
55
10
5
Commercial
Industrial
Military
5
0
Range
2
-55
Test Conditions
V
IH
V
(min), CE
V
OUT
IN
Max
= 0V
55
55
20
30
20
55
= 0V
-55
20
25
35
1
and WE
Note 1
-70
20
25
35
Min
V
70
10
5
5
0
IL
(max), OE is high. Switching
Max
Unit
7
9
mA
-70
Max
70
70
25
35
25
70
P4C1023/P4C1023L
Page 3 of 11
Unit
pF
pF
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns