P4C1048L PYRAMID [Pyramid Semiconductor Corporation], P4C1048L Datasheet - Page 6
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P4C1048L
Manufacturer Part Number
P4C1048L
Description
LOW POWER 512K x 8 CMOS STATIC RAM
Manufacturer
PYRAMID [Pyramid Semiconductor Corporation]
Datasheet
1.P4C1048L.pdf
(12 pages)
Notes:
6. CE and WE are LOW for WRITE cycle.
7. OE is LOW for this WRITE cycle to show t
8. If CE goes HIGH simultaneously with WE HIGH, the output remains in a high impedance state.
9. Write Cycle Time is measured from the last valid address to the first transitioning address.
Document # SRAM129 REV D
AC CHARACTERISTICS - WRITE CYCLE
(Over Recommended Operating Temperature & Supply Voltage)
WRITE CYCLE NO. 1 (WE
Symbol
P4C1048L
t
t
t
t
t
t
t
t
t
t
WC
CW
AW
WP
DW
WZ
OW
AH
DH
AS
Write Cycle Time
Chip Enable Time
to End of Write
Address Valid to
End of Write
Address Set-up
Time
Write Pulse Width
Address Hold
Time
Data Valid to End
of Write
Data Hold Time
Write Enable to
Output in High Z
Output Active from
End of Write
Parameter
WE
WE
WE CONTROLLED)
WE
WZ
and t
Min
OW
45
35
35
35
25
0
0
0
5
.
-45
Max
18
(6,7)
Min
55
40
40
40
30
0
0
0
5
-55
Max
20
Min
70
60
60
50
35
0
0
0
5
-70
Max
25
Min
100
75
75
60
45
0
0
0
5
-100
Max
35
Page 6 of 12
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns