P4C1298 PYRAMID [Pyramid Semiconductor Corporation], P4C1298 Datasheet - Page 3

• Manufacturer Part Number: P4C1298
• Description: ULTRA HIGH SPEED 64K x 4 STATIC CMOS RAM
• Manufacturer: PYRAMID [Pyramid Semiconductor Corporation]

POWER DISSIPATION CHARACTERISTICS VS. SPEED
*V
*T
§
†
DATA RETENTION WAVEFORM
Document # SRAM135 REV OR
DATA RETENTION CHARACTERISTICS (P4C1298L ONLY)
Symbol
Symbol
t
V
I
t
t
RC
This parameter is guaranteed but not tested.
CCDR
CDR
R
A
CC
DR
†
I
= +25°C
= Read Cycle Time
CC
= 5.5V. Tested with outputs open. f = Max. Switching inputs are 0V and 3V. CE = V
Dynamic Operating Current*
V
Data Retention Current
Chip Deselect to
Data Retention Time
Operation Recovery Time
CC
for Data Retention
Parameter
Parameter
CE
V
V
Test Conditions
IN
IN
0.2V
V
V
CC
CC
Military
Industrial
Commercial
–0.2V,
–0.2V or
Temperature
Range
Min
t
2.0
RC
0
§
2.0V
10
–15
160
160
160
Typ.*
V
IL
CC
=
–20
150
125
135
3.0V
15
–25
120
115
120
1000
2.0V
V
Max
CC
–35
115
120
110
=
2000
3.0V
Page 3 of 11
P4C1298/L
Unit
mA
mA
mA
Unit
µA
ns
ns
V