EN29F512 EON [Eon Silicon Solution Inc.], EN29F512 Datasheet - Page 21

• Manufacturer Part Number: EN29F512
• Description: 512 Kbit (64K x 8-bit) 5V Flash Memory
• Manufacturer: EON [Eon Silicon Solution Inc.]

Table 7. DC Characteristics
(T
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
Symbol
V
I
I
I
I
V
V
a
V
V
I
I
CC1
CC2
CC3
CC4
V
LKO
I
LIT
LO
OH
OL
LI
IH
ID
= 0°C to 70°C or - 40°C to 85°C; V
IL
Supply Current (Program or Erase)
A9 Voltage (Electronic Signature)
A9 Current (Electronic Signature)
Supply Current (Standby) CMOS
Supply Current (read) TTL Byte
Supply Current (Standby) TTL
Output High Voltage CMOS
Supply voltage (Erase and
Output High Voltage TTL
Output Leakage Current
Input Leakage Current
Output Low Voltage
Input High Voltage
Input Low Voltage
Program lock-out)
Parameter
CC
Rev. A, Issue Date: 2003/10/20
= 5.0V ± 10%)
21
Byte program, Sector or Chip
CE
©2003 Eon Silicon Solution, Inc., www.essi.com.tw
Erase in progress
CE
Test Conditions
0V≤ V
0V≤ V
I
I
= V
OH
OH
I
OL
CE
f = 6MHz
A9 = V
= Vcc ± 0.3V
IL
= -2.5 mA
= -100 µA
OUT
;
= 2 mA
IN
= V
OE
≤ Vcc
≤ Vcc
ID
IH
= V
IH
;
Vcc -
0.4V
10.5
Min
-0.5
2.4
3.2
EN29F512
2
Vcc +
Max
0.45
11.5
100
1.0
5.0
0.8
0.5
4.2
±5
±5
30
30
Unit
mA
MA
mA
µA
µA
µA
µA
V
V
V
V
V
V
V