EN29F512 EON [Eon Silicon Solution Inc.], EN29F512 Datasheet - Page 25

• Manufacturer Part Number: EN29F512
• Description: 512 Kbit (64K x 8-bit) 5V Flash Memory
• Manufacturer: EON [Eon Silicon Solution Inc.]

Parameter Description
Input voltage with respect to Vss on all pins except I/O pins
(including A9 and OE )
Input voltage with respect to Vss on all I/O Pins
Vcc Current
Table 11. ERASE AND PROGRAMMING PERFORMANCE
Table 12. LATCH UP CHARACTERISTICS
Note : These are latch up characteristics and the device should never be put under
these conditions. Refer to Absolute Maximum ratings for the actual operating limits.
Table 13. 32-PIN PLCC PIN CAPACITANCE @ 25°C, 1.0MHz
Table 14. 32-PIN TSOP PIN CAPACITANCE @ 25°C, 1.0MHz
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
Erase/Program Endurance
Parameter Symbol
Parameter Symbol
Byte Programming Time
Chip Programming Time
Sector Erase Time
Chip Erase Time
C
C
C
C
Parameter
C
C
OUT
OUT
IN2
IN2
IN
IN
Control Pin Capacitance
Control Pin Capacitance
Parameter Description
Parameter Description
Output Capacitance
Output Capacitance
Input Capacitance
Input Capacitance
100K
Typ
0.3
1.5
0.5
7
Limits
Max
17.5
1.25
200
5
Rev. A, Issue Date: 2003/10/20
25
Test Setup
Test Setup
V
V
V
V
V
V
OUT
OUT
©2003 Eon Silicon Solution, Inc., www.essi.com.tw
IN
IN
IN
IN
= 0
= 0
= 0
= 0
cycles
= 0
= 0
Unit
sec
sec
sec
µs
-100 mA
Typ
Typ
8.5
7.5
Excludes 00H programming prior to
-1.0 V
-1.0 V
Minimum 100K cycles guaranteed
4
8
8
6
Min
Excludes system level overhead
Max
Max
Comments
7.5
12
12
12
6
9
Vcc + 1.0 V
erasure
100 mA
EN29F512
12.0 V
Max
Unit
Unit
pF
pF
pF
pF
pF
pF