K9F6408Q0C-H SAMSUNG [Samsung semiconductor], K9F6408Q0C-H Datasheet - Page 29

• Manufacturer Part Number: K9F6408Q0C-H
• Description: 8M x 8 Bit Bit NAND Flash Memory
• Manufacturer: SAMSUNG [Samsung semiconductor]

Data Protection & Powerup sequence
The device is designed to offer protection from any involuntary program/erase during power-transitions. An internal voltage detector
disables all functions whenever Vcc is below about 1.1V/2V(K9F6408Q0C:1.1V, K9F6408U0C:2V). WP pin provides hardware pro-
tection and is recommended to be kept at V
before internal circuit gets ready for any command sequences as shown in Figure 12. The two step command sequence for program/
erase provides additional software protection.
Figure 12. AC Waveforms for Power Transition
K9F6408Q0C
K9F6408U0C
WP
WE
V
CC
1.8V device : ~ 1.5V
3.3V device : ~ 2.5V
10 s
IL
during power-up and power-down and recovery time of minimum 10 s is required
High
29
FLASH MEMORY
1.8V device : ~ 1.5V
3.3V device : ~ 2.5V