EMC326SP16AK Emlsi Inc., EMC326SP16AK Datasheet - Page 30

• Manufacturer Part Number: EMC326SP16AK
• Description: 2mx16 Bit Cellularram
• Manufacturer: Emlsi Inc.

Table 11: Deep Power-Down Specifications
Note: Typical (TYP) I
Table 12: Partial-Array Refresh Specifications and Conditions
Note: 1. IPAR (MAX) values measured at 85°C. IPAR might be slightly higher for up to 500 ms after changes to the PAR array partition or when entering
standby mode.
Table 13: Capacitance
Note: These parameters are verified in device characterization and are not 100% tested.
Figure 21: AC Input/Output Reference Waveform
Note:
1. AC test inputs are driven at VccQ for a logic 1 and VssQ for a logic 0. Input rise and fall times (10% to 90%) <1.6ns.
2. Input timing begins at VccQ/2.
3. Output timing ends at VccQ/2.
Figure 22: AC Output Load Circuit
Note: All tests are performed with the outputs configured for default setting of half drive strength (BCR[5:4] = 01b).
Partial-array refresh standby
Input Capacitance
Deep Power-Down
Capacitance(DQ)
Description
Description
Input/Output
Description
current
ZZ
value is tested at Vcc=1.8V, T
Input
VccQ
VssQ
1
V
IN
= V
Tc = +25°C; f = 1 MHz;
Vcc, VccQ = 1.95V; +85°C
VccQ/2
CCQ
Conditions
Conditions
V
V
IN
or 0V, CE# = V
Conditions
IN
= VccQ or 0V;
2
= 0V
DUT
A
=25°C and not guaranteed.
CCQ
Test Points
Test Points
30pF
I
30
PAR
50-Ohm
Symbol
Symbol
Standard power (no
C
C
IO
IN
designation )
Symbol
VccQ/2
I
ZZ
VccQ/2
3
Min
2.0
3.5
Array Partition
Output
EMC326SP16AK
Typ
-
Full
1/2
1/4
1/8
0
2Mx16 CellularRAM
Max
6
6
Max
10
Max
100
95
90
85
70
Unit
pF
pF
Note
Unit
Unit
uA
µ
1
1
A