E28F320J5100 Intel, E28F320J5100 Datasheet - Page 24

• Manufacturer Part Number: E28F320J5100
• Manufacturer: Intel

INTEL
4.2.6
This field provides critical details of the flash device geometry.
24
Offset
2Ah
2Ch
2Dh
27h
28h
®
StrataFlash™ MEMORY TECHNOLOGY, 32 AND 64 MBIT
DEVICE GEOMETRY DEFINITION
Length
(bytes)
01h
02h
02h
01h
04h
Device Size = 2
Flash Device Interface description
Maximum number of bytes in write buffer = 2
Number of Erase Block Regions within device:
Erase Block Region Information
bits 15–0 = y, where y+1 = Number of Erase Blocks
of identical size within region
bits 31–16 = z, where the Erase Block(s) within this
Region are (z) times 256 bytes
value
0000h
0002h
bits 7–0 = x = # of Erase Block Regions
Table 11. Device Geometry Definition
meaning
x8 asynchronous
x8/x16 asynchronous
N
in number of bytes.
Description
N
PRELIMINARY
27:
27:
28:
29:
2A:
2B:
2C:
y: 64 Blocks
2D:
2E:
y: 32 Blocks
2D:
2E:
z: (128 KB size)
2F:
30:
StrataFlash™
(64-Mbit)
(32-Mbit)
Memory
Intel
0017h
(64-Mbit)
0016h
(32-Mbit)
0002h
0000h
0005h
0000h
0001h
003Fh
0000h
001Fh
0000h
0000h
0002h
®