MT47H64M16HR-25E AIT:H Micron, MT47H64M16HR-25E AIT:H Datasheet

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MT47H64M16HR-25E AIT:H

Manufacturer Part Number
MT47H64M16HR-25E AIT:H
Description
Ic Ddr2 Sdram 1gbit 84fbga
Manufacturer
Micron
Datasheet
Automotive DDR2 SDRAM
MT47H128M8 – 16 Meg x 8 x 8 banks
MT47H64M16 – 8 Meg x 16 x 8 banks
Features
• Industrial and automotive temperature compliant
• V
• JEDEC-standard 1.8V I/O (SSTL_18-compatible)
• Differential data strobe (DQS, DQS#) option
• 4n-bit prefetch architecture
• Duplicate output strobe (RDQS) option for x8
• DLL to align DQ and DQS transitions with CK
• 8 internal banks for concurrent operation
• Programmable CAS latency (CL)
• Posted CAS additive latency (AL)
• WRITE latency = READ latency - 1
• Programmable burst lengths (BL): 4 or 8
• Adjustable data-output drive strength
• 32ms, 8192-cycle refresh
• On-die termination (ODT)
• RoHS-compliant
• AEC-Q100
• PPAP submisson
• 8D response time
Table 1: Key Timing Parameters
PDF: 09005aef840eff89
1gbddr2_ait_aat.pdf – Rev. C 7/11 EN
DD
= 1.8V ±0.1V, V
Speed Grade
-25E
-25
-3E
-3
Products and specifications discussed herein are subject to change by Micron without notice.
DDQ
= 1.8V ±0.1V
CL = 3
400
400
400
400
t
CK
CL = 4
533
533
667
533
Data Rate (MT/s)
1
CL = 5
Options
• Configuration
• FBGA package (Pb-free) – x8
• FBGA package (Pb-free) – x16
• FBGA package (lead solder) – x8
• FBGA package (lead solder) – x16
• Timing – cycle time
• Self refresh
• Operating temperature
• Revision
1Gb: x8, x16 Automotive DDR2 SDRAM
800
667
667
667
– 128 Meg x 8 (16 Meg x 8 x 8 banks)
– 64 Meg x 16 (8 Meg x 16 x 8 banks)
– 60-ball FBGA (8mm x 10mm) Rev. H
– 84-ball FBGA (8mm x 12.5mm) Rev.
– 60-ball FBGA (8mm x 10mm) Rev. H
– 84-ball FBGA (8mm x 12.5mm) Rev.
– 2.5ns @ CL = 5 (DDR2-800)
– 3.0ns @ CL = 5 (DDR2-667)
– Standard
– Low-power
– Industrial (–40°C ≤ T
– Automotive (–40°C ≤ T
Note:
H
H
–40°C ≤ T
+105ºC)
Micron Technology, Inc. reserves the right to change products or specifications without notice.
1. Not all options listed can be combined to
1
define an offered product. Use the Part
Catalog Search on
product offerings and availability.
CL = 6
A
800
800
n/a
n/a
≤ +85°C)
C
≤ +95°C;
C
CL = 7
, T
n/a
n/a
n/a
n/a
2010 Micron Technology, Inc. All rights reserved.
www.micron.com
A
t
Marking
RC (ns)
Features
55
55
54
55
128M8
64M16
None
-25E
AAT
HW
AIT
HR
CF
JN
:H
-3
for
L

Related parts for MT47H64M16HR-25E AIT:H

MT47H64M16HR-25E AIT:H Summary of contents

Page 1

... Use the Part Catalog Search on www.micron.com product offerings and availability 800 n/a 800 n/a n/a n/a n/a n/a Micron Technology, Inc. reserves the right to change products or specifications without notice. 2010 Micron Technology, Inc. All rights reserved. Features Marking 128M8 64M16 -25E -3 None L ...

Page 2

... Note: FBGA Part Number System Due to space limitations, FBGA-packaged components have an abbreviated part marking that is different from the part number. For a quick conversion of an FBGA code, see the FBGA Part Marking Decoder on Micron’s Web site: http://www.micron.com. PDF: 09005aef840eff89 1gbddr2_ait_aat.pdf – Rev. C 7/11 EN ...

Page 3

... Output Drive Strength ................................................................................................................................ 78 DQS# Enable/Disable ................................................................................................................................. 78 RDQS Enable/Disable ................................................................................................................................. 78 Output Enable/Disable ............................................................................................................................... 78 On-Die Termination (ODT) ......................................................................................................................... 79 PDF: 09005aef840eff89 1gbddr2_ait_aat.pdf – Rev. C 7/11 EN 1Gb: x8, x16 Automotive DDR2 SDRAM 3 Micron Technology, Inc. reserves the right to change products or specifications without notice. Features 2010 Micron Technology, Inc. All rights reserved. ...

Page 4

... CKE Low Anytime ...................................................................................................................................... 121 ODT Timing .................................................................................................................................................. 123 MRS Command to ODT Update Delay ........................................................................................................ 125 PDF: 09005aef840eff89 1gbddr2_ait_aat.pdf – Rev. C 7/11 EN 1Gb: x8, x16 Automotive DDR2 SDRAM 4 Micron Technology, Inc. reserves the right to change products or specifications without notice. Features 2010 Micron Technology, Inc. All rights reserved. ...

Page 5

... DH Derating Values with Differential Strobe ............................................. and IH) .................................................... and IH) ........................................... 55 t and DH ................................................... DDR2-667 ...................................... 60 REF ) at DDR2-533 ...................................... 61 REF ) at DDR2-400 ...................................... 61 REF Micron Technology, Inc. reserves the right to change products or specifications without notice. 2010 Micron Technology, Inc. All rights reserved. Features ...

Page 6

... Figure 50: Bank Read – Without Auto Precharge .............................................................................................. 95 PDF: 09005aef840eff89 1gbddr2_ait_aat.pdf – Rev. C 7/11 EN 1Gb: x8, x16 Automotive DDR2 SDRAM t IS ............................................................................................................... .............................................................................................................. ............................................................................................................. ............................................................................................................. 63 t RCD (MIN) .............................................................................. 86 6 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2010 Micron Technology, Inc. All rights reserved. Features ...

Page 7

... Automotive DDR2 SDRAM t t DQSQ, QH, and Data Valid Window ................................................... DQSQ, QH, and Data Valid Window ...................................................... and DQSCK .......................................................................................... 99 7 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2010 Micron Technology, Inc. All rights reserved. Features ...

Page 8

... READ A = READ with auto precharge REFRESH = REFRESH SR = SELF REFRESH WRITE = WRITE WRITE A = WRITE with auto precharge READ Reading READ A Reading with auto precharge Micron Technology, Inc. reserves the right to change products or specifications without notice. 2010 Micron Technology, Inc. All rights reserved. ...

Page 9

... Rev. C 7/11 EN 1Gb: x8, x16 Automotive DDR2 SDRAM Functional Description C values must be derated when Micron Technology, Inc. reserves the right to change products or specifications without notice. exceeds +85°C; this also is < 0°C or > C 2010 Micron Technology, Inc. All rights reserved. ...

Page 10

... T DD via 1kΩ* resistor DD via 1kΩ* resistor Micron Technology, Inc. reserves the right to change products or specifications without notice. Functional Description exceeds +85° < 0°C C via 1kΩ* resistors, or float 2010 Micron Technology, Inc. All rights reserved. ...

Page 11

... CK out Data Micron Technology, Inc. reserves the right to change products or specifications without notice. 2010 Micron Technology, Inc. All rights reserved sw3 sw3 R3 DQ0–DQ7 R3 sw3 R3 DQS, DQS# R3 RDQS# sw3 RDQS R3 DM ...

Page 12

... CK out Data Micron Technology, Inc. reserves the right to change products or specifications without notice. 2010 Micron Technology, Inc. All rights reserved sw3 sw3 R3 DQ0–DQ15 R3 sw3 R3 UDQS, UDQS# R3 LDQS, LDQS# sw3 R3 UDM, LDM ...

Page 13

... DQS V NF, DQ7 SSQ V DQ0 V DDQ DDQ DQ2 V NF, DQ5 SSQ SSDL DD RAS# CK# ODT CAS# CS A11 RFU A13 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2010 Micron Technology, Inc. All rights reserved. ...

Page 14

... SSQ DDQ LDQS V DQ7 SSQ V DQ0 V DDQ DDQ DQ2 V DQ5 SSQ SSDL DD RAS# CK# ODT CAS# CS A11 RFU RFU Micron Technology, Inc. reserves the right to change products or specifications without notice. 2010 Micron Technology, Inc. All rights reserved. ...

Page 15

... PDF: 09005aef840eff89 1gbddr2_ait_aat.pdf – Rev. C 7/11 EN 1Gb: x8, x16 Automotive DDR2 SDRAM Ball Assignments and Descriptions is applied during first power-up. After Micron Technology, Inc. reserves the right to change products or specifications without notice. REF REF 2010 Micron Technology, Inc. All rights reserved. ...

Page 16

... Reserved for future use: Row address bits A13 (x16 only), A14, and A15. PDF: 09005aef840eff89 1gbddr2_ait_aat.pdf – Rev. C 7/11 EN 1Gb: x8, x16 Automotive DDR2 SDRAM Ball Assignments and Descriptions /2). DDQ and SSQ 16 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2010 Micron Technology, Inc. All rights reserved. ...

Page 17

... 0.8 TYP 6.4 CTR 8 ±0.1 Sn, 36% Pb, 2% Ag). 17 Seating plane 0.12 A 1.1 ±0.1 0.25 MIN Exposed gold plated pad 1.0 MAX X 0.7 nominal. Micron Technology, Inc. reserves the right to change products or specifications without notice. 2010 Micron Technology, Inc. All rights reserved. Packaging Ball A1 ID ...

Page 18

... 0.8 TYP 6.4 CTR 8 ±0.1 Sn, 36% Pb, 2% Ag). 18 Seating plane 0.12 A 1.1 ±0.1 0.25 MIN Exposed gold plated pad 1.0 MAX X 0.7 nominal. Micron Technology, Inc. reserves the right to change products or specifications without notice. 2010 Micron Technology, Inc. All rights reserved. Packaging Ball A1 ID ...

Page 19

... DCK C 1 – 2 – DIO = 1.8V ±0.1V, V DDQ REF (peak-to-peak) = 0.1V. DM input is grouped with I/O Micron Technology, Inc. reserves the right to change products or specifications without notice. 2010 Micron Technology, Inc. All rights reserved. Packaging ...

Page 20

... V DDQ REF . DDQ prior to using the thermal impedan- Micron Technology, Inc. reserves the right to change products or specifications without notice. 2010 Micron Technology, Inc. All rights reserved. Notes μA μA μA ...

Page 21

... C θ JA (°C/W) Airflow = θ JB (°C/W) 2m/s 49.5 35.6 42.3 35.2 46.5 32.5 39.6 32.3 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2010 Micron Technology, Inc. All rights reserved. Notes °C 1 ° ° ° ° ° ...

Page 22

... Defined by pattern in Table 9 (page 23) Defined by pattern in Table 9 (page 23) 22 Micron Technology, Inc. reserves the right to change products or specifications without notice. DD -3E -3 -37E 7.5 7.5 7 ...

Page 23

... Rev. C 7/11 EN 1Gb: x8, x16 Automotive DDR2 SDRAM Electrical Specifications – Where general I DD7 without violating DD 23 Micron Technology, Inc. reserves the right to change products or specifications without notice. Parameters DD parameters RRD (I ) using 2010 Micron Technology, Inc. All rights reserved. ...

Page 24

... Fast exit 20 MR12 = 0 Slow exit 10 MR12 = x16 35 x8 125 x16 160 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2010 Micron Technology, Inc. All rights reserved. Parameters -3E/ -3 Units ...

Page 25

... REF DDQ limits increase) on IT-option and AT-option DD ≤ 85°C: C and I DD4R DD5W must be derated by 7% DD7 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2010 Micron Technology, Inc. All rights reserved. Parameters -3E/ -3 Units 110 mA 125 140 mA 145 ...

Page 26

... and I DD3P(FAST) DD4R DD4W DD5W must be derated by DD3P(SLOW) will increase by this amount if DD6 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2010 Micron Technology, Inc. All rights reserved. Parameters must be derat- ...

Page 27

AC Timing Operating Specifications Table 11: AC Operating Specifications and Conditions Not all speed grades listed may be supported for this device; refer to the title page for speeds supported; Notes: 1–5 apply to the entire table 1.8V ...

Page 28

Table 11: AC Operating Specifications and Conditions (Continued) Not all speed grades listed may be supported for this device; refer to the title page for speeds supported; Notes: 1–5 apply to the entire table 1.8V ±0.1V ...

Page 29

Table 11: AC Operating Specifications and Conditions (Continued) Not all speed grades listed may be supported for this device; refer to the title page for speeds supported; Notes: 1–5 apply to the entire table 1.8V ±0.1V ...

Page 30

Table 11: AC Operating Specifications and Conditions (Continued) Not all speed grades listed may be supported for this device; refer to the title page for speeds supported; Notes: 1–5 apply to the entire table 1.8V ±0.1V ...

Page 31

Table 11: AC Operating Specifications and Conditions (Continued) Not all speed grades listed may be supported for this device; refer to the title page for speeds supported; Notes: 1–5 apply to the entire table 1.8V ±0.1V ...

Page 32

Table 11: AC Operating Specifications and Conditions (Continued) Not all speed grades listed may be supported for this device; refer to the title page for speeds supported; Notes: 1–5 apply to the entire table 1.8V ±0.1V ...

Page 33

Table 11: AC Operating Specifications and Conditions (Continued) Not all speed grades listed may be supported for this device; refer to the title page for speeds supported; Notes: 1–5 apply to the entire table 1.8V ±0.1V ...

Page 34

Table 11: AC Operating Specifications and Conditions (Continued) Not all speed grades listed may be supported for this device; refer to the title page for speeds supported; Notes: 1–5 apply to the entire table 1.8V ±0.1V ...

Page 35

... CH (AVG) and CL (AVG) are the average of any 200 t CH actually applied to the device CK and CK# inputs; thus, ), where 6–10, or 11–50 is the amount of clock time allowed to when derating clock-related output timing (see notes 19 and 48). Micron requires to be used. t RPRE). and V ...

Page 36

The inputs to the DRAM must be aligned to the associated clock, that is, the actual clock that latches it in. Howev- er, the input timing (in ns) references to the lowing input parameters are determined by taking the ...

Page 37

Table 32 (page 60). Single-ended DQS data timing is referenced at DQS crossing V for a single-ended DQS strobe are listed in Table 33 (page 60)–Table 35 (page 61) on Table 33 (page 60), Table 34 (page 61), and Table ...

Page 38

The half-clock of AOFD’s 2.5 CK assumes a 50/50 clock duty cycle. This half-clock value must be derated by the amount of half-clock duty cycle error. For example, if the clock duty cycle was 47/53, t 0.03, ...

Page 39

... REF bypass capacitor. REF is a system supply for signal termination re and must track variations in the DC level of REF Micron Technology, Inc. reserves the right to change products or specifications without notice. 2010 Micron Technology, Inc. All rights reserved. Units Notes ...

Page 40

... TT2(EFF TT3(EFF) ΔVM –6 – 6 and V IH(AC) ), and I(V ), respectively. IH[AC] IL[AC] Micron Technology, Inc. reserves the right to change products or specifications without notice. 2010 Micron Technology, Inc. All rights reserved. Units Notes Ω Ω Ω the ball IL(DC) ...

Page 41

... IH(AC) V IH(DC noise REF error REF error REF noise REF V IL(DC) V IL(AC) Micron Technology, Inc. reserves the right to change products or specifications without notice. 2010 Micron Technology, Inc. All rights reserved. Units mV mV Units 1 mV DDQ 1 mV DDQ - 250 mV - 200 mV ...

Page 42

... ID(DC) IX(AC) MP(DC ID(AC IN(DC)min + 0.3V or more negative than V DDQ when static and is centered around V Micron Technology, Inc. reserves the right to change products or specifications without notice. 2010 Micron Technology, Inc. All rights reserved. Units Notes IH(DC) ...

Page 43

... Numbers in diagram reflect nominal values (V PDF: 09005aef840eff89 1gbddr2_ait_aat.pdf – Rev. C 7/11 EN 1Gb: x8, x16 Automotive DDR2 SDRAM Input Electrical Characteristics and Operating Conditions 43 Micron Technology, Inc. reserves the right to change products or specifications without notice. = 1.8V). DDQ 2010 Micron Technology, Inc. All rights reserved. ...

Page 44

... OH - 280mV. /I must be less than 21Ω for values of V OUT plus a noise margin and IH,min Micron Technology, Inc. reserves the right to change products or specifications without notice. 2010 Micron Technology, Inc. All rights reserved. Units Notes Notes OUT ...

Page 45

... V OUT IL(DC)max IH(DC)min to V IL(AC)max IH(AC)min Micron Technology, Inc. reserves the right to change products or specifications without notice. 2010 Micron Technology, Inc. All rights reserved. Units Notes Ω Ω V/ 1.7V ...

Page 46

... Table 20: Full Strength Pull-Down Current (mA) Voltage (V) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 PDF: 09005aef840eff89 1gbddr2_ait_aat.pdf – Rev. C 7/11 EN 1Gb: x8, x16 Automotive DDR2 SDRAM 0.0 0.5 1.0 V (V) OUT Min 0.00 4.30 8.60 12.90 16.90 20.40 23.28 25.44 26.79 27.67 28.38 28.96 29.46 29.90 30.29 30.65 30.98 31.31 31.64 31.96 46 Output Driver Characteristics 1.5 Nom 0.00 5.63 11.30 16.52 22.19 27.59 32.39 36.45 40.38 44.01 47.01 49.63 51.71 53.32 54.9 56.03 57.07 58.16 59.27 60.35 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2010 Micron Technology, Inc. All rights reserved. Max 0.00 7.95 15.90 23.85 31.80 39.75 47.70 55.55 62.95 69.55 75.35 80.35 84.55 87.95 90.70 93.00 95.05 97.05 99.05 101.05 ...

Page 47

... Micron Technology, Inc. reserves the right to change products or specifications without notice. 2010 Micron Technology, Inc. All rights reserved. Max 0.00 –7.95 –15.90 –23.85 –31.80 –39.75 –47.70 –55.55 –62.95 –69.55 – ...

Page 48

... Table 22: Reduced Strength Pull-Down Current (mA) Voltage (V) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 PDF: 09005aef840eff89 1gbddr2_ait_aat.pdf – Rev. C 7/11 EN 1Gb: x8, x16 Automotive DDR2 SDRAM 0.0 0.5 1.0 V (V) OUT Min 0.00 1.72 3.44 5.16 6.76 8.16 9.31 10.18 10.72 11.07 11.35 11.58 11.78 11.96 12.12 12.26 12.39 12.52 12.66 12.78 48 Output Driver Characteristics 1.5 Nom 0.00 2.98 5.99 8.75 11.76 14.62 17.17 19.32 21.40 23.32 24.92 26.30 27.41 28.26 29.10 29.70 30.25 30.82 31.41 31.98 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2010 Micron Technology, Inc. All rights reserved. Max 0.00 4.77 9.54 14.31 19.08 23.85 28.62 33.33 37.77 41.73 45.21 48.21 50.73 52.77 54.42 55.80 57.03 58.23 59.43 60.63 ...

Page 49

... Micron Technology, Inc. reserves the right to change products or specifications without notice. 2010 Micron Technology, Inc. All rights reserved. Max 0.00 –4.77 –9.54 –14.31 –19.08 –23.85 –28.62 –33.33 –37.77 –41.73 – ...

Page 50

... Rev. C 7/11 EN 1Gb: x8, x16 Automotive DDR2 SDRAM Power and Ground Clamp Characteristics Minimum Power Clamp Current (mA) 0.0 0.0 0.0 0.0 0.0 0.0 0.0 0.0 0.1 1.0 2.5 4.7 6.8 9.1 11.0 13.5 16.0 18.2 21.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 Voltage Across Clamp (V) 50 Minimum Ground Clamp Current (mA) 0.0 0.0 0.0 0.0 0.0 0.0 0.0 0.0 0.1 1.0 2.5 4.7 6.8 9.1 11.0 13.5 16.0 18.2 21.0 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2010 Micron Technology, Inc. All rights reserved. ...

Page 51

... Vns 0.23 Vns 0.23 Vns 0.23 Vns Overshoot area Undershoot area Micron Technology, Inc. reserves the right to change products or specifications without notice. 2010 Micron Technology, Inc. All rights reserved. -37E -5E 0.50V 0.50V 0.50V 0.50V 1.00 Vns 1.33 Vns 1.00 Vns 1.33 Vns ...

Page 52

... IX is the true input signal and the rising edge and 2 × V IH(AC) Micron Technology, Inc. reserves the right to change products or specifications without notice. 2010 Micron Technology, Inc. All rights reserved. Notes ...

Page 53

... REF(DC the time of the rising clock transition), a valid in- IH[AC] IL[AC] 53 Micron Technology, Inc. reserves the right to change products or specifications without notice. Input Slew Rate Derating t IH (hold time) required is calculated IS and Δ derating IS (base) + Δ ...

Page 54

... Micron Technology, Inc. reserves the right to change products or specifications without notice. 1.0 V/ns Δ Δ Units 247 154 ps 239 149 ps 227 143 ps 210 ...

Page 55

... Micron Technology, Inc. reserves the right to change products or specifications without notice. 2010 Micron Technology, Inc. All rights reserved. Units ...

Page 56

... Nominal slew rate REF region IH(AC)min REF(DC Tangent line REF region TR Tangent line ( IH[AC]min REF[DC] TR Micron Technology, Inc. reserves the right to change products or specifications without notice. 2010 Micron Technology, Inc. All rights reserved. ...

Page 57

... Nominal slew rate REF region Nominal line Tangent line REF line region TF Tangent line ( IH[DC]min REF[DC Micron Technology, Inc. reserves the right to change products or specifications without notice. 2010 Micron Technology, Inc. All rights reserved. ...

Page 58

... DQ referenced at REF is listed in Table 34 (page 61) and REF -based fully derated values for the DQ REF -based fully derated values for REF Micron Technology, Inc. reserves the right to change products or specifications without notice. 2010 Micron Technology, Inc. All rights reserved. 0.8 V/ns Δ Δ Δ ...

Page 59

... REF(DC) at the time of the rising clock transition), a valid in- IH(AC) and DQ referenced at REF is listed in Table 33 (page 60). Ta- REF t DS and a Micron Technology, Inc. reserves the right to change products or specifications without notice. 2010 Micron Technology, Inc. All rights reserved. 0.8 V/ns Δ Δ Δ ...

Page 60

... Micron Technology, Inc. reserves the right to change products or specifications without notice. 2010 Micron Technology, Inc. All rights reserved. 0.4 V/ 175 38 20 142 17 –22 75 – ...

Page 61

... Micron Technology, Inc. reserves the right to change products or specifications without notice. Input Slew Rate Derating ) at DDR2-533 REF ) REF 1.0 V/ns 0.8 V/ns 0.6 V/ ...

Page 62

... DH Nominal slew rate REF region IH(AC)min REF(DC and V IL(DC)max IH(DC)min REF region - V ) IH[AC]min REF[DC] TR and V IL(DC)max IH(DC)min Micron Technology, Inc. reserves the right to change products or specifications without notice. 2010 Micron Technology, Inc. All rights reserved ...

Page 63

... IH(DC)min REF(DC and V IL(DC)max IH(DC)min Nominal line Tangent line REF region line TF Tangent line ( IH[DC]min REF[DC and V IL(DC)max IH(DC)min Micron Technology, Inc. reserves the right to change products or specifications without notice. 2010 Micron Technology, Inc. All rights reserved ...

Page 64

... DQS# DQS Micron Technology, Inc. reserves the right to change products or specifications without notice. Input Slew Rate Derating V DDQ V IH(AC)min V IH(DC)min V REF(DC) V IL(DC)min V IL(AC)min V SSQ V DDQ V IH(AC)min V IH(DC)min V ...

Page 65

... DDQ Crossing point Vswing SSQ 65 Micron Technology, Inc. reserves the right to change products or specifications without notice. Input Slew Rate Derating V REF V DDQ V IH(AC)min V IH(DC)min V REF(DC) V IL(DC)max V IL(AC)max V SSQ 2010 Micron Technology, Inc. All rights reserved. ...

Page 66

... measurements. DD Micron Technology, Inc. reserves the right to change products or specifications without notice. 2010 Micron Technology, Inc. All rights reserved. Commands A9–A0 Notes Column address 8 Column address ...

Page 67

... Table 38 (page 69). 67 Command/Action t RP has been met, and any READ burst is com- t RCD has been met. No data bursts/ Micron Technology, Inc. reserves the right to change products or specifications without notice. 2010 Micron Technology, Inc. All rights reserved. Commands Notes ...

Page 68

... RP has been met. After t MRD is met, the DDR2 SDRAM will be in the RP is met, all banks will be in the idle state. Micron Technology, Inc. reserves the right to change products or specifications without notice. 2010 Micron Technology, Inc. All rights reserved. Commands met, the ...

Page 69

... A WRITE burst has been initiated with auto precharge disabled and has not yet terminated. 69 Command/Action t RP has been met, and any READ t RCD has been met. Micron Technology, Inc. reserves the right to change products or specifications without notice. 2010 Micron Technology, Inc. All rights reserved. Commands Notes ...

Page 70

... WR measured WTR is either two or WTR/ Minimum Delay (with Concurrent Auto Precharge (BL/2) + WTR (BL/2) 1 (BL/2) (BL/ Micron Technology, Inc. reserves the right to change products or specifications without notice. 2010 Micron Technology, Inc. All rights reserved. Commands t CK, whichever Units ...

Page 71

... Automotive DDR2 SDRAM t MRD is met. t RCD (MIN) by delaying the actual registration of the READ/WRITE t RCD (MIN) by delaying the actual registration of the READ/WRITE 71 Micron Technology, Inc. reserves the right to change products or specifications without notice. Commands 2010 Micron Technology, Inc. All rights reserved. ...

Page 72

... Automotive DDR2 SDRAM t RP) after the PRECHARGE command is issued, except in the case of t MRD before initiating any subsequent operations such as an ACTIVATE com- 72 Mode Register (MR) Micron Technology, Inc. reserves the right to change products or specifications without notice. 2010 Micron Technology, Inc. All rights reserved. ...

Page 73

... Reserved Reserved 0 1 Reserved 1 0 Reserved 1 1 Reserved Burst Type Sequential Interleaved CAS Latency (CL) Reserved Reserved Reserved Micron Technology, Inc. reserves the right to change products or specifications without notice. 2010 Micron Technology, Inc. All rights reserved. ...

Page 74

... Micron Technology, Inc. reserves the right to change products or specifications without notice. 2010 Micron Technology, Inc. All rights reserved. ...

Page 75

... XARDS parameter is used for slow-exit active PD exit timing. The DLL can 75 Mode Register (MR) normal and I DD3P Specifications and Conditions table. DD Micron Technology, Inc. reserves the right to change products or specifications without notice. 2010 Micron Technology, Inc. All rights reserved (in low- DD3P ...

Page 76

... READ NOP NOP ( READ NOP NOP ( AC, DQSCK, and 76 Micron Technology, Inc. reserves the right to change products or specifications without notice. Mode Register (MR) t RCD (MIN) by delaying the inter NOP NOP NOP ...

Page 77

... ODS DLL E0 DLL Enable 0 Enable (normal) 1 Disable (test/debug) E1 Output Drive Strength 0 Full 1 Reduced 3 Posted CAS# Additive Latency (AL Reserved Micron Technology, Inc. reserves the right to change products or specifications without notice. 2010 Micron Technology, Inc. All rights reserved. ...

Page 78

... The output disable feature is intended to be used during I characterization of read current. DD PDF: 09005aef840eff89 1gbddr2_ait_aat.pdf – Rev. C 7/11 EN 1Gb: x8, x16 Automotive DDR2 SDRAM DQSCK parameters. 78 Micron Technology, Inc. reserves the right to change products or specifications without notice. Extended Mode Register (EMR) 2010 Micron Technology, Inc. All rights reserved. ...

Page 79

... Off-Chip Driver (OCD) Impedance Calibration The OFF-CHIP DRIVER function is an optional DDR2 JEDEC feature not supported by Micron and thereby must be set to the default state. Enabling OCD beyond the default settings will alter the I/O drive characteristics and the timing and output I/O specifica- tions will no longer be valid (see Initialization (page 83) for proper setting of OCD de- faults) ...

Page 80

... Transitioning Data t DQSQ NOP NOP NOP Transitioning Data Micron Technology, Inc. reserves the right to change products or specifications without notice. 2010 Micron Technology, Inc. All rights reserved. T8 NOP Don’t Care T7 NOP DI Don’t Care ...

Page 81

... Extended Mode Register 2 (EMR2) t MRD before initiating any subsequent opera Address bus Extended mode register (Ex Micron Technology, Inc. reserves the right to change products or specifications without notice. 2010 Micron Technology, Inc. All rights reserved. ...

Page 82

... Extended Mode Register 3 (EMR3) t MRD before initiating any subsequent opera Address bus Extended mode 1 0 register (Ex Micron Technology, Inc. reserves the right to change products or specifications without notice. 2010 Micron Technology, Inc. All rights reserved. ...

Page 83

Initialization Figure 40: DDR2 Power-Up and Initialization DDR2 SDRAM must be powered up and initialized in a predefined manner. Operational procedures other than those specified may result in unde- fined operation. Figure 40 illustrates, and the notes outline, the sequence ...

Page 84

... EMR(3) requirements. mand, provide LOW to BA1 and A0; provide HIGH to BA0; bits E7, E8, and E9 can be set to “0” or “1;” Micron recommends setting them to “0;” remaining EMR bits must be “0.” Extended Mode Register (EMR) (page 77) for all EMR requirements. ...

Page 85

... DQS represents DQS, DQS#, UDQS, UDQS#, LDQS, LDQS#, RDQS, RDQS# for the ap- propriate configuration (x4, x8, x16); DQ represents DQ[3:0] for x4, DQ[7:0] for x8 and DQ[15:0] for x16. required to be decoded). 85 Initialization Micron Technology, Inc. reserves the right to change products or specifications without notice. 2010 Micron Technology, Inc. All rights reserved. ...

Page 86

... CK ≤ 6. Figure 41 also shows the case for NOP NOP NOP NOP Row Bank z Micron Technology, Inc. reserves the right to change products or specifications without notice. 2010 Micron Technology, Inc. All rights reserved. ACTIVATE T9 RD/WR Col Bank y Don’t Care t RC. t FAW. This ...

Page 87

... FAW (MIN) = 37.5ns ACT READ NOP NOP Row Col Bank d Bank d t RRD (MIN) = 7.5ns, Micron Technology, Inc. reserves the right to change products or specifications without notice. 2010 Micron Technology, Inc. All rights reserved. ACTIVATE T10 ACT Row Bank e Don’t Care ...

Page 88

... DQSQ (valid data-out skew), t DQSCK (DQS transition skew to CK) and t t DQSS (NOM) case is shown ( DQSS [MIN] and 88 Micron Technology, Inc. reserves the right to change products or specifications without notice. READ t RPRE). The t QH (data-out t DQSS [MAX] are de- 2010 Micron Technology, Inc. All rights reserved. ...

Page 89

... T4n NOP NOP T3n T4 T4n NOP NOP DO n Transitioning Data t DQSQ. Micron Technology, Inc. reserves the right to change products or specifications without notice. 2010 Micron Technology, Inc. All rights reserved. READ T5 NOP T5 T5n NOP T5 NOP Don’t Care ...

Page 90

... NOP T5n T2n T3 T3n T4 T4n T5 NOP NOP NOP DO n Transitioning Data t DQSQ. Micron Technology, Inc. reserves the right to change products or specifications without notice. 2010 Micron Technology, Inc. All rights reserved. READ T6n T6 NOP T6n T6 NOP DO b Don’t Care ...

Page 91

... NOP T4n T5 T5n NOP NOP NOP NOP DO n Transitioning Data t DQSQ. Micron Technology, Inc. reserves the right to change products or specifications without notice. 2010 Micron Technology, Inc. All rights reserved. READ T7n T8 NOP T7n T8 NOP DO b Don’t Care ...

Page 92

... Transitioning Data t DQSQ. Micron Technology, Inc. reserves the right to change products or specifications without notice. 2010 Micron Technology, Inc. All rights reserved. READ T9 Valid DO DO Don’t Care t DQSCK, and T10 T11 NOP NOP DI ...

Page 93

... NOP NOP Bank a Valid RTP (MIN (MIN) Transitioning Data Don’t Care t DQSQ. Micron Technology, Inc. reserves the right to change products or specifications without notice. 2010 Micron Technology, Inc. All rights reserved. READ T7 NOP T8 ACT Bank a Valid ...

Page 94

... RTP + RP)/ CK. In any event, the internal pre- Minimum Delay (with Concurrent Auto Precharge) BL/2 (BL/ Micron Technology, Inc. reserves the right to change products or specifications without notice. 2010 Micron Technology, Inc. All rights reserved. READ t RAS (MIN RP)/ CK. The Units t CK ...

Page 95

... (MAX (MIN) Transitioning Data t RAS (MIN) is met RTP 2CK). Micron Technology, Inc. reserves the right to change products or specifications without notice. 2010 Micron Technology, Inc. All rights reserved. READ T8n T9 ACT RA RA Bank x t RPST (MIN) ...

Page 96

... LZ (MAX (MAX (MAX) Internal precharge Transitioning Data t RAS (MIN) and Micron Technology, Inc. reserves the right to change products or specifications without notice. 2010 Micron Technology, Inc. All rights reserved. READ T8n ACT RA RA Bank x t RPST (MIN) ...

Page 97

... T2n T3 T3n T2n T3 T3n Data Data Data valid valid valid window window window t DQSQ window. DQS transitions at t QHS. Micron Technology, Inc. reserves the right to change products or specifications without notice. 2010 Micron Technology, Inc. All rights reserved. READ t QHS DQSQ. ...

Page 98

... QHS T2n T3 T3n T2n T3 T3n T3 T3n T2n Data valid Data valid Data valid window window window t DQSQ window. LDQS defines the Micron Technology, Inc. reserves the right to change products or specifications without notice. 2010 Micron Technology, Inc. All rights reserved. READ t QHS ...

Page 99

... T5n T6 T3n T4 T4n T5 T5n (MIN (MAX (MAX) t DQSQ window. t AC. Micron Technology, Inc. reserves the right to change products or specifications without notice. 2010 Micron Technology, Inc. All rights reserved. WRITE t DQSQ. T6n T7 t RPST T6n T6n T6n t DQSS. ...

Page 100

... CK, whichever is greater. Data for any t WR starts at the end of the data burst, regardless Minimum Delay (with Concurrent Auto Precharge (BL/2) + WTR (BL/2) 1 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2010 Micron Technology, Inc. All rights reserved. WRITE t DQSS t WR must be Units t CK ...

Page 101

... DQSS 101 T2 T2n T3 T3n T4 NOP NOP NOP DQSS DQSS Transitioning Data Don’t Care t DQSS. Micron Technology, Inc. reserves the right to change products or specifications without notice. 2010 Micron Technology, Inc. All rights reserved. WRITE ...

Page 102

... T4n T5 T5n WRITE NOP NOP Bank, Col Transitioning Data t DQSS. Micron Technology, Inc. reserves the right to change products or specifications without notice. 2010 Micron Technology, Inc. All rights reserved. WRITE T6 NOP Don’t Care T6 T6n NOP 1 Don’t Care ...

Page 103

... Transitioning Data t CK from previous WRITE. t DQSS. Micron Technology, Inc. reserves the right to change products or specifications without notice. 2010 Micron Technology, Inc. All rights reserved. WRITE T9 Valid Don’t Care where ...

Page 104

... NOP Bank a, Col Transitioning Data t DQSS WTR is either 2 or WTR/ Micron Technology, Inc. reserves the right to change products or specifications without notice. 2010 Micron Technology, Inc. All rights reserved. WRITE T9 T9n NOP Don’t Care t CK, whichever is ...

Page 105

... PRECHARGE command could be applied earlier. 105 NOP NOP NOP t WR Transitioning Data t DQSS not required and Micron Technology, Inc. reserves the right to change products or specifications without notice. 2010 Micron Technology, Inc. All rights reserved. WRITE T7 PRE t RP Bank all) Don’t Care ...

Page 106

... WR t RAS 5 t DQSL t DQSH t WPST t WPRE DI n Transitioning Data t DQSS. Micron Technology, Inc. reserves the right to change products or specifications without notice. 2010 Micron Technology, Inc. All rights reserved. WRITE T9 PRE All banks One bank Bank Don’t Care ...

Page 107

... NOP RAS 5 t DQSL t DQSH t WPST DI n Transitioning Data t WR (in ns DQSS. Micron Technology, Inc. reserves the right to change products or specifications without notice. 2010 Micron Technology, Inc. All rights reserved. WRITE T9 NOP Don’t Care t CK and ...

Page 108

... NOP RAS 6 t DQSL t DQSH t WPST DI n Transitioning Data t DQSS. Micron Technology, Inc. reserves the right to change products or specifications without notice. 2010 Micron Technology, Inc. All rights reserved. WRITE T10 T11 NOP 1 PRE All banks One bank Bank RPA ...

Page 109

... T3 T3n T4 t DSS 2 t DSH 1 t DSS DQSL t DQSH t WPST Transitioning Data Don’t Care t DQSS (MIN). t DQSS (MAX). t DQSS. Micron Technology, Inc. reserves the right to change products or specifications without notice. 2010 Micron Technology, Inc. All rights reserved. PRECHARGE ...

Page 110

... Ta0 Ta1 Tb0 NOP 1 REF 2 NOP 1 t RFC 2 t RFC (MIN) Indicates a break in time scale Micron Technology, Inc. reserves the right to change products or specifications without notice. 2010 Micron Technology, Inc. All rights reserved. REFRESH exceeds C Tb1 Tb2 NOP 1 ACT Don’ ...

Page 111

... Automotive DDR2 SDRAM t CKE specifications at least 1 × t XSNR. A simple algorithm for meeting both refresh and DLL require- 111 Micron Technology, Inc. reserves the right to change products or specifications without notice. SELF REFRESH t CK after entering self re specifications at least 1 × ...

Page 112

... AOFD and AOFPD have been satisfied) prior to en- t CKE (MIN) must be satisfied prior to exiting self re- t XSRD is satisfied. Micron Technology, Inc. reserves the right to change products or specifications without notice. 2010 Micron Technology, Inc. All rights reserved. SELF REFRESH Td0 Valid 5 Valid 7 ...

Page 113

... WTR/ CK, whichever is greater. t RFC (MAX). The minimum duration for power-down t CKE (MIN) parameter. The following must be main- 113 Micron Technology, Inc. reserves the right to change products or specifications without notice. Power-Down Mode t WTR (WRITE-to- t WTR 2010 Micron Technology, Inc. All rights reserved. ...

Page 114

... IS Valid XARD 4 t XARDS 5 Exit power-down mode × IH. CKE must not transition Micron Technology, Inc. reserves the right to change products or specifications without notice. 2010 Micron Technology, Inc. All rights reserved. T8 Valid Valid Don’t Care ...

Page 115

... Precharge power-down entry Self refresh entry ) in self refresh and power- REF t t CK. Minimum CKE LOW time is Micron Technology, Inc. reserves the right to change products or specifications without notice. 2010 Micron Technology, Inc. All rights reserved. Notes 11, 12 ...

Page 116

... T5 T6 NOP 1 Valid Valid Power-down or self refresh 2 entry Transitioning Data Micron Technology, Inc. reserves the right to change products or specifications without notice. 2010 Micron Technology, Inc. All rights reserved CKE (MIN) Don’t Care T7 t CKE (MIN) Don’t Care ...

Page 117

... Power-down or self refresh entry Indicates a break in Transitioning Data time scale t WR [MIN] ns/ Micron Technology, Inc. reserves the right to change products or specifications without notice. 2010 Micron Technology, Inc. All rights reserved CKE (MIN) Don’t Care Ta2 t CKE (MIN) Don’t Care ...

Page 118

... RFC (MIN) being satis NOP t CKE (MIN) Power-down 1 entry Don’t Care t CK after the ACTI- t RCD (MIN) being satisfied. Micron Technology, Inc. reserves the right to change products or specifications without notice. 2010 Micron Technology, Inc. All rights reserved after the ...

Page 119

... NOP t CKE (MIN) t MRD Power-down 3 entry t RP met prior to issuing LM command. t MRD is satisfied. Micron Technology, Inc. reserves the right to change products or specifications without notice. 2010 Micron Technology, Inc. All rights reserved after the t RP (MIN) being sat- Don’t Care ...

Page 120

... Ta3 t CKE (MIN) 3 NOP NOP LM NOP DLL RESET t XP 200 Indicates a break in time scale Micron Technology, Inc. reserves the right to change products or specifications without notice. 2010 Micron Technology, Inc. All rights reserved. Tb0 Valid Valid Don’t Care re- ...

Page 121

... CK. Minimum CKE LOW time DDQ Micron Technology, Inc. reserves the right to change products or specifications without notice. 2010 Micron Technology, Inc. All rights reserved. Reset t CKE = 3 × CK and DDL ...

Page 122

... CKE (MIN) 1 NOP 2 High-Z High 400ns (MIN) Start of normal 5 initialization sequence R On Transitioning Data TT Micron Technology, Inc. reserves the right to change products or specifications without notice. 2010 Micron Technology, Inc. All rights reserved. Reset Tb0 PRE All banks High-Z t RPA Don’t Care ...

Page 123

... AXPD (MIN) after exiting pow AOND and t AXPD (MIN) is not t AXPD (MIN) is not satisfied, Micron Technology, Inc. reserves the right to change products or specifications without notice. 2010 Micron Technology, Inc. All rights reserved. ODT Timing t ANPD t AXPD (MIN) is AON timing pa- ...

Page 124

... AONPD/ AOFPD (asynchronous) 124 Synchronous t t AXPD (8 CKs) First CKE latched HIGH Any mode except self refresh mode t AOND/ Micron Technology, Inc. reserves the right to change products or specifications without notice. 2010 Micron Technology, Inc. All rights reserved. ODT Timing t AOFD ...

Page 125

... Valid Valid Valid Valid Valid Valid t AOFD t AOF (MAX) t AOF (MIN) R Unknown Micron Technology, Inc. reserves the right to change products or specifications without notice. 2010 Micron Technology, Inc. All rights reserved. ODT Timing Ta5 NOP T6 Valid Valid Don’t Care ...

Page 126

... AOFD t AOF (MAX) t AOF (MIN) t AOFPD (MAX) t AOFPD (MIN) R Unknown Micron Technology, Inc. reserves the right to change products or specifications without notice. 2010 Micron Technology, Inc. All rights reserved. ODT Timing T7 Valid Valid Don’t Care T6 NOP Don’t Care ...

Page 127

... NOP NOP NOP NOP t ANPD (MIN) t AOND t AON (MAX) t AON (MIN) t AONPD (MAX) t AONPD (MIN) R Unknown Micron Technology, Inc. reserves the right to change products or specifications without notice. 2010 Micron Technology, Inc. All rights reserved. ODT Timing Don’t Care ...

Page 128

... NOP NOP NOP NOP t AOFD t AOF (MAX) t AOF (MIN) t AOFPD (MAX) t AOFPD (MIN Transitioning Micron Technology, Inc. reserves the right to change products or specifications without notice. 2010 Micron Technology, Inc. All rights reserved. ODT Timing Ta5 NOP Don’t Care ...

Page 129

... NOP NOP NOP t AOND t AON (MAX) t AON (MIN) t AONPD (MAX) t AONPD (MIN) Unknown R On Transitioning R TT Micron Technology, Inc. reserves the right to change products or specifications without notice. 2010 Micron Technology, Inc. All rights reserved. ODT Timing Ta5 NOP Don’t Care TT ...

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