MT47H64M16HR-25E AIT:H Micron, MT47H64M16HR-25E AIT:H Datasheet - Page 32

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MT47H64M16HR-25E AIT:H

Manufacturer Part Number
MT47H64M16HR-25E AIT:H
Description
Ic Ddr2 Sdram 1gbit 84fbga
Manufacturer
Micron
Datasheet
Table 11: AC Operating Specifications and Conditions (Continued)
Not all speed grades listed may be supported for this device; refer to the title page for speeds supported; Notes: 1–5 apply to the entire table;
V
DDQ
Internal READ-to-
PRECHARGE delay
CAS#-to-CAS#
delay
Write recovery
time
Write AP recovery
+ precharge time
Internal WRITE-to-
READ delay
LOAD MODE cycle
time
REFRESH-
to-
ACTIVATE
or to
-REFRESH
interval
Average periodic
refresh
(commercial)
Average periodic
refresh
(industrial)
Average periodic
refresh
(automotive)
CKE LOW to CK,
CK# uncertainty
= 1.8V ±0.1V, V
Parameter
AC Characteristics
256Mb
512Mb
1Gb
2Gb
DD
= 1.8V ±0.1V
Symbol
t
t
t
DELAY
t
t
REFI
t
t
t
REFI
t
t
MRD
t
WTR
CCD
DAL
REFI
RTP
RFC
WR
AT
IT
t
127.5
WR +
Min
105
195
7.5
t
7.5
15
75
RP
2
2
-187E
Max
7.8
3.9
3.9
t
127.5
WR +
Min
105
195
7.5
t
7.5
15
75
RP
2
2
-25E
Max
7.8
3.9
3.9
t
127.5
WR +
Min
105
195
t
7.5
7.5
15
75
RP
2
2
-25
MIN limit =
Max
7.8
3.9
3.9
MAX limit = n/a
t
127.5
WR +
Min
105
195
7.5
t
7.5
15
75
RP
2
2
-3E
t
IS +
Max
7.8
3.9
3.9
t
CK +
t
127.5
WR +
Min
105
195
t
t
7.5
7.5
15
75
IH
RP
2
2
-3
Max
7.8
3.9
3.9
t
127.5
WR +
Min
105
195
t
7.5
7.5
15
75
RP
2
2
-37E
Max
7.8
3.9
3.9
t
127.5
WR +
Min
105
195
7.5
t
15
10
75
RP
2
2
-5E
Max
7.8
3.9
3.9
Units Notes
t
t
ns
CK
ns
ns
ns
CK
ns
μs
μs
μs
ns
18, 37,
18, 37
18, 37
18, 41
18, 41
18, 41
18, 41
39
18
40
18
42

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