MT46H32M16LFBF-6 L IT:B Micron, MT46H32M16LFBF-6 L IT:B Datasheet - Page 45
MT46H32M16LFBF-6 L IT:B
Manufacturer Part Number
MT46H32M16LFBF-6 L IT:B
Description
Manufacturer
Micron
Datasheet
1.MT46H32M16LFBF-6LITB.pdf
(98 pages)
- Current page: 45 of 98
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PDF: 09005aef82d5d305
512mb_ddr_mobile_sdram_t47m.pdf – Rev. I 12/09 EN
4. AUTO REFRESH and LOAD MODE REGISTER commands can only be issued when all
5. All states and sequences not shown are illegal or reserved.
6. Requires appropriate DM masking.
7. A WRITE command can be applied after the completion of the READ burst; otherwise, a
banks are idle.
BURST TERMINATE must be used to end the READ burst prior to asserting a WRITE com-
mand.
From
Command
READ with
Auto Precharge
To Command
READ or READ with auto precharge
WRITE or WRITE with auto precharge
PRECHARGE
ACTIVE
45
512Mb: x16, x32 Mobile LPDDR SDRAM
Micron Technology, Inc. reserves the right to change products or specifications without notice.
(with Concurrent Auto
© 2004 Micron Technology, Inc. All rights reserved.
Minimum Delay
[CL + (BL/2)]
Precharge)
(BL/2) ×
1
1
Truth Tables
t
t
CK
CK
t
CK
t
CK
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