mt46h32m16lf Micron Semiconductor Products, mt46h32m16lf Datasheet
mt46h32m16lf
Manufacturer Part Number
mt46h32m16lf
Description
512mb X16, X32 Mobile Ddr Sdram
Manufacturer
Micron Semiconductor Products
Datasheet
1.MT46H32M16LF.pdf
(84 pages)
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Mobile DDR SDRAM
MT46H32M16LF – 8 Meg x 16 x 4 banks
MT46H16M32LF – 4 Meg x 32 x 4 banks
Features
• V
• Bidirectional data strobe per byte of data (DQS)
• Internal, pipelined double data rate (DDR)
• Differential clock inputs (CK and CK#)
• Commands entered on each positive CK edge
• DQS edge-aligned with data for READs; center-
• Four internal banks for concurrent operation
• Data masks (DM) for masking write data—one mask
• Programmable burst lengths (BL): 2, 4, 8, or 16
• Concurrent auto precharge option is supported
• Auto refresh and self refresh modes
• 1.8V LVCMOS-compatible inputs
• On-chip temperature sensor to control self refresh
• Partial-array self refresh (PASR)
• Deep power-down (DPD)
• Status read register (SRR)
• Selectable output drive strength (DS)
• Clock stop capability
• 64ms refresh
Table 1:
Table 2:
PDF: 09005aef82d5d305/Source: 09005aef82d5d2e7
512mb_ddr_mobile_sdram_t47m_density__1.fm - Rev. D 05/08 EN
Architecture
Configuration
Refresh count
Row addressing
Column addressing
architecture; two data accesses per clock cycle
aligned with data for WRITEs
per byte
rate
Speed Grade
DD/
V
-54
-75
-5
-6
DD
Q = 1.70–1.95V
Key Timing Parameters (CL = 3)
Configuration Addressing
Clock Rate (MHz)
200
185
166
133
8 Meg x 16 x 4 banks
32 Meg x 16
Access Time
A0–A12
A0–A9
5.0ns
5.0ns
5.0ns
6.0ns
8K
1
Options
• V
• Configuration
• Row-size option
• Plastic “green” package
• Timing – cycle time
• Power
• Operating temperature range
• Design revision
Notes: 1. Contact factory for availability.
– 1.8V/1.8V
– 32 Meg x 16 (8 Meg x 16 x 4 banks)
– 16 Meg x 32 (4 Meg x 32 x 4 banks)
– JEDEC-standard option
– Reduced page-size option
– 60-ball VFBGA (8 mm x 9 mm)
– 90-ball VFBGA (10mm x 13mm)
– 5ns @ CL = 3
– 5.4ns @ CL = 3
– 6ns @ CL = 3
– 7.5ns @ CL = 3
– Standard I
– Low-power I
– Commercial (0° to +70°C)
– Industrial (–40°C to +85°C)
DD
4 Meg x 32 x 4 banks
Micron Technology, Inc., reserves the right to change products or specifications without notice.
/V
512Mb: x16, x32 Mobile DDR SDRAM
2. Only available for x16 configuration.
3. Only available for x32 configuration.
16 Meg x 32
DD
A0–A12
A0–A8
Q
8K
DD
DD
2/I
2/I
DD
DD
6
6
1
©2004 Micron Technology, Inc. All rights reserved.
1
Reduced Page-Size
8 Meg x 32 x 4 banks
2
16 Meg x 32
3
Option
A0–A13
A0–A7
Marking
8K
Features
32M16
16M32
None
None
CM
-54
-75
LG
BF
LF
IT
-5
-6
:B
H
L