MT46H32M16LFBF-6 L IT:B Micron, MT46H32M16LFBF-6 L IT:B Datasheet - Page 76

• Manufacturer Part Number: MT46H32M16LFBF-6 L IT:B
• Manufacturer: Micron

Figure 38: Random WRITE Cycles
PDF: 09005aef82d5d305
512mb_ddr_mobile_sdram_t47m.pdf – Rev. I 12/09 EN
Command
Address
DQ
DQS
CK#
DM
CK
3,4
Notes:
WRITE
Bank,
Col b
T0
1,2
1. Each WRITE command can be to any bank.
2. Programmed BL = 2, 4, 8, or 16 in cases shown.
3. D
4. b' (or x, n, a, g) = the next data-in following D
t
DQSS (NOM)
med burst order.
IN
b (or x, n, a, g) = data-in for column b (or x, n, q, g).
WRITE
Bank,
Col x
D
T1
IN
1,2
T1n
D
IN
WRITE
Bank,
Col n
T2
D
IN
1,2
76
T2n
D
IN
512Mb: x16, x32 Mobile LPDDR SDRAM
WRITE
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Bank,
Col a
T3
D
IN
1,2
T3n
D
Don’t Care
IN
IN
b (x, n, a, g) according to the program-
WRITE
Bank,
Col g
T4
D
IN
1,2
T4n
D
IN
Transitioning Data
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WRITE Operation
NOP
D
T5
IN
T5n
D
IN