SST30VR023-500-C-WH Silicon Storage Tech, SST30VR023-500-C-WH Datasheet - Page 4

• Manufacturer Part Number: SST30VR023-500-C-WH
• Manufacturer: Silicon Storage Tech

Data Sheet
TABLE 2: R
TABLE 3: DC O
TABLE 4: C
©2003 Silicon Storage Technology, Inc.
Symbol
V
V
V
V
Symbol
I
I
I
I
I
V
V
Parameter
C
C
DD1
DD2
SB
LI
LO
DD
SS
IH
IL
OL
OH
I/O
IN
1. f = Frequency of operation (MHz) = 1/cycle time
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
1
1
Parameter
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
Parameter
ROM Operating Supply Current
RAM Operating Supply Current
Standby V
Input Leakage Current
Output Leakage Current
Output Low Voltage
Output High Voltage
Description
I/O Pin Capacitance
Input Capacitance
ECOMMENDED
APACITANCE (Ta = 25°C, f=1 Mhz)
PERATING
DD
Current
2 Mbit ROM + 1 Mbit / 2 Mbit / 256 Kbit SRAM ROM/RAM Combo
DC O
C
HARACTERISTICS
PERATING
C
Min
2.2
-1
-1
ONDITIONS
http://store.iiic.cc/
V
4.0+1.1(f)
DD
4.0+1(f)
Max
= 2.7-3.3V
0.4
10
SST30VR021 / SST30VR022 / SST30VR023
1
1
4
1
1
Units
mA
mA
µA
µA
µA
V
V
Test Conditions
ROMCS#=V
V
ROMCS#=V
ROMCS# V
V
V
ROMCS#=RAMCS#=V
WE#=V
I
I
OL
OH
IN
IN
IN
=1.0 mA
=V
=V
=-0.5 mA
Test Condition
V
Min
-0.3
2.7
2.4
IH
DD
SS
0
V
V
IL
I/O
or V
-0.2V or V
IN
to V
, V
= 0V
= 0V
I/O
IL
IH
DD
IL,
DD
, RAMCS#=V
, RAMCS#=V
=V
-0.2V, RAMCS# V
I
I/O
SS
=Opens
V
IN
DD
to V
Max
0.2V
3.3
0.3
0
+ 0.5
IH
DD
or OE#=V
IH
IL
S71135-05-000
,
, I
Maximum
I/O
8 pF
6 pF
=Opens
DD
IH
-0.2V
Units
or
V
V
V
V
T2.0 1135
T3.5 1135
T4.1 1135
12/03