SSTUM32865ET/S,518 NXP Semiconductors, SSTUM32865ET/S,518 Datasheet - Page 11

IC BUFFER 1.8V 28BIT 160-TFBGA

SSTUM32865ET/S,518

Manufacturer Part Number
SSTUM32865ET/S,518
Description
IC BUFFER 1.8V 28BIT 160-TFBGA
Manufacturer
NXP Semiconductors
Datasheets

Specifications of SSTUM32865ET/S,518

Logic Type
1:2 Registered Buffer with Parity
Supply Voltage
1.7 V ~ 2 V
Number Of Bits
28
Operating Temperature
0°C ~ 85°C
Mounting Type
Surface Mount
Package / Case
160-TFBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
935284905518
SSTUM32865ET/S-T
SSTUM32865ET/S-T

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SSTUM32865ET/S,518
Manufacturer:
NXP Semiconductors
Quantity:
10 000
DDR Bus Switches
CBTV bus switches are typically used to expand total memory
capacity in a system by providing a switchable, low-impedance
path to multiple memory banks while providing high bus
isolation to the remaining banks. The 1:2 switches provide a
path to two memory banks, the 1:4 switches to four memory
banks. CBTV devices implement non-directional MOS
switches, designed with an optimum amount of on-resistance,
for close impedance matching of the signal path between the
memory controller (host port HP) and the DRAM (DIMM port
or DP). Simple pin control determines which of the DIMM ports
is “on”, automatically isolating the remaining DIMM ports. In
the off position, the switches provide isolation and pull-down
of the unused DIMM port nodes to define idle conditions
to a stable low-power state. Low on-capacitance, near-zero
propagation delays, and 2.5-V supply voltage operation make
CBT switches suitable for use with SSTL_2 signaling in DDR
systems up to 400 MT/s.
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CBTU4411
CBTV4010
CBTV4011
CBTV4012
CBTV4020
2.5-V typical supply voltage
Typically used with SSTL_2 signaling
Low on-resistance with series impedance matching resistor
optimized for signal integrity
Low on-capacitance and fast propagation delays enable data
rates of up to 400 Mbps
4-DIMM (1:4) and 2-DIMM (1:2), 10-channel or 20-channel
configurations
1.8V 11-bit 1:4 DDR2 DRAM multiplexer/bus switch with
12-Ω on-resistance
2.5-V 10-bit 1:4 DDR SDRAM multiplexer/bus switch with
20-Ω on-resistance
2.5-V 10-bit 1:4 DDR SDRAM multiplexer/bus switch with
10-Ω on-resistance
2.5-V 10-bit 1:4 DDR SDRAM multiplexer/bus switch with
10-Ω on-resistance and 400-Ω pull-down
2.5-V 20-bit 1:2 DDR SDRAM multiplexer/bus switch with
20-Ω on-resistance
NXP DDR memory bus switch in a typical configuration
SO
S1
S2
S3
DDR unbuffered DIMM
HPO
HP9
DRAM
DDR2
DDR unbuffered DIMM
DRAM
DDR2
DDR unbuffered DIMM
DRAM
DDR2
DDR unbuffered DIMM
DRAM
DDR2
DRAM
DDR
Sw
Sw
command
Address/
data
SPD
Sw
Sw
DRAM
DDR2
DRAM
DDR2
Sw
Sw
DRAM
DDR2
DRAM
DDR
Memory interfaces
Sw
Sw
1:4 CBTV bus switch
CBTV401x
command
Address/
data
SW02082
2DPG
0DP0
1DP0
2DP0
3DP0
0DP9
1DP9
3DP9
11

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