S25FL128SAGMFI011 Spansion, S25FL128SAGMFI011 Datasheet - Page 98
![no-image](/images/no-image-200.jpg)
S25FL128SAGMFI011
Manufacturer Part Number
S25FL128SAGMFI011
Description
Flash 128Mb 3V 133MHz Serial NOR Flash
Manufacturer
Spansion
Datasheet
1.S25FL128SAGNFI001.pdf
(153 pages)
Specifications of S25FL128SAGMFI011
Rohs
yes
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Part Number:
S25FL128SAGMFI011
Manufacturer:
SPANSION
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98
Phase
SCLK
CS#
IO0
IO1
Figure 10.34 Dual I/O Read Command Sequence (4-byte Address, BBh [ExtAdd=1], HPLC=10b)
During any operation, if CS# toggles high to low to high for eight cycles (or less) and data input (IO0 and IO1)
are not set for a valid instruction sequence, then the device will be released from Dual I/O Enhanced High
Performance Read mode. Note that the four mode bit cycles are part of the device’s internal circuitry latency
time to access the initial address after the last address cycle that is clocked into IO0 (SI) and IO1 (SO).
It is important that the I/O signals be set to high-impedance at or before the falling edge of the first data out
clock. At higher clock speeds the time available to turn off the host outputs before the memory device begins
to drive (bus turn around) is diminished. It is allowed and may be helpful in preventing I/O signal contention,
for the host system to turn off the I/O signal outputs (make them high impedance) during the last two “don’t
care” mode cycles or during any dummy cycles.
Following the latency period the memory content, at the address given, is shifted out two bits at a time
through IO0 (SI) and IO1 (SO). Two bits are shifted out at the SCK frequency at the falling edge of SCK
signal.
The address can start at any byte location of the memory array. The address is automatically incremented to
the next higher address in sequential order after each byte of data is shifted out. The entire memory can
therefore be read out with one single read instruction and address 000000h provided. When the highest
address is reached, the address counter will wrap around and roll back to 000000h, allowing the read
sequence to be continued indefinitely.
CS# should not be driven high during mode or dummy bits as this may make the mode bits indeterminate.
7
Phase
SCLK
1. During the Dual I/O Enhanced High Performance Command Sequence, if the Mode bits are any
CS#
IO0
IO1
Figure 10.33 Dual I/O Read Command Sequence (3-byte Address, BBh [ExtAdd=0], HPLC=00b)
6
value other than Axh, then the next time CS# is raised high the device will be released from Dual
I/O Read Enhanced High Performance Read mode.
5
Instruction
4
7
3
6
2
5
Instruction
1
4
0
3
S25FL128S and S25FL256S
31 29 27
30 28 26 0
2
Address
1
0
D a t a
23 21 19
22 20 18 0
1
Address
S h e e t
6 Dummy
1
4 Dummy
S25FL128S_256S_00_05 July 12, 2012
6
7
Data 1
4
5
6
7
Data 1
2
3
4
5
0
1
2
3
6
7
0
1
Data 2
4
5
6
7
Data 2
2
3
4
5
0
1
2
3
0
1
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