UBA2017P/1,112 NXP Semiconductors, UBA2017P/1,112 Datasheet - Page 19
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UBA2017P/1,112
Manufacturer Part Number
UBA2017P/1,112
Description
Display Drivers & Controllers SMPS CTRLR 12.4V
Manufacturer
NXP Semiconductors
Datasheet
1.UBA2017AP1112.pdf
(29 pages)
Specifications of UBA2017P/1,112
Rohs
yes
Operating Supply Voltage
12.4 V
Mounting Style
Through Hole
Package / Case
DIP-16
Maximum Output Current
105 mA
Product
Fluorescent Lamp Driver
Factory Pack Quantity
25
Supply Current
2.2 mA
NXP Semiconductors
9. Thermal characteristics
Table 5.
10. Characteristics
Table 6.
T
UBA2017
Product data sheet
unless otherwise specified.
Symbol
R
Symbol
High voltage
I
Start-up
V
V
V
I
I
V
V
I
V
I
I
HB preheat
R
t
V
V
I
I
leak
stb(VDD)
pu(PH/EN)
restart(VDD)
clamp(VDD)
VDD
to(ph)
ch(CIFB)
dch(CIFB)
amb
startup(VDD)
stop(VDD)
hys(VDD)
rst(VDD)
restart(VDD)
clamp(VDD)
O(PH/EN)
ctrl(ph)SLHB
th(j-a)
ext(PH/EN)
= 25 °C; settings according to default setting
Thermal characteristics
Characteristics
Parameter
thermal resistance from junction to
ambient
Parameter
leakage current
start-up voltage on pin VDD
stop voltage on pin VDD
hysteresis voltage on pin VDD
standby current on pin VDD
pull-up current on pin PH/EN
reset voltage on pin VDD
restart voltage on pin VDD
restart current on pin VDD
clamp voltage on pin VDD
clamp current on pin VDD
supply current
external resistance on pin PH/EN
preheat time-out time
output voltage on pin PH/EN
overcurrent protection threshold voltage
on pin SLHB
charge current on pin CIFB
discharge current on pin CIFB
All information provided in this document is subject to legal disclaimers.
[1]
; all voltages referenced to GND; current flow into the IC is positive;
Rev. 2 — 15 May 2012
600 V fluorescent lamp driver with linear dimming function
Conditions
in free air; mounted on a single-sided PCB;
SO16 package
in free air; mounted on a single-sided PCB;
DIP16 package
Conditions
V
V
V
V
Standby or Stop state;
V
V
IC off; I
IC off; V
C
during preheat or ignition state
preheat
no fault detected; Preheat and
Ignition states only;
V
preheat overcurrent detected;
V
FSHB
GHHB
SHHB
VDD
PH/EN
VDD
CIFB
CIFB
CPT
= 11.5 V
= 9 V
= 100 nF
= 1.5 V
= 1.5 V
= 630 V;
= 630 V; V
= 630 V;
= 0.25 V
VDD
VDD
= 0.33 mA
= 14.0 V
UBA2017/UBA2017A
VDD
= 0 V
Min
-
11.9
9.6
2.1
0.2
7.7
3.6
6.2
0.85
13.0
25
1.2
38.6
0.8
1.78
0.44
−10.3 −9.0
7.7
Typ
-
12.4
10.0
1.1
13.4
45
1.84
2.4
0.24
9
4.2
6.5
1.7
-
0.94
0.48
9.0
© NXP B.V. 2012. All rights reserved.
Typ
120
90
Max
2
12.9
10.4
2.7
0.28
10.3
4.8
6.8
1.35
13.8
-
2.2
1.08
1.9
0.52
−7.7
10.3
-
Unit
K/W
K/W
19 of 29
Unit
μA
V
V
V
mA
μA
V
V
mA
V
mA
mA
kΩ
s
V
V
μA
μA