IS61WV12816EDBLL-10TLI ISSI, IS61WV12816EDBLL-10TLI Datasheet - Page 11

• Manufacturer Part Number: IS61WV12816EDBLL-10TLI
• Description: SRAM 2Mb (128K x 16) 10ns 2.4V-3.6V
• Manufacturer: ISSI

Specifications of IS61WV12816EDBLL-10TLI

• Rohs: yes
• Memory Size: 2 Mbit
• Organization: 128 Kbit x 16
• Access Time: 10 ns
• Supply Voltage - Max: 3.6 V
• Supply Voltage - Min: 2.4 V
• Maximum Operating Current: 35 mA
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 40 C
• Mounting Style: SMD/SMT
• Package / Case: TSOP-44
• Memory Type: Asynchronous CMOS
• Factory Pack Quantity: 135

IS61/64WV12816EDBLL
HIGH SPEED (IS61/64WV12816EDBLL)
DATA RETENTION SWITCHING CHARACTERISTICS
V
I
Note 1:
Integrated Silicon Solution, Inc. — www.issi.com
Rev. A
09/29/2011
DATA RETENTION WAVEfORM
Symbol
t
t
dr
sdr
rdr
dr
Typical values are measured at V
GND
Parameter
V
Data Retention Current
Data Retention Setup Time See Data Retention Waveform
Recovery Time
CE
dd
V
V
DD
DR
for Data Retention
dd
= V
dr
t
SDR
(min), T
Test Condition
See Data Retention Waveform
V
See Data Retention Waveform
dd
(CE Controlled)
= 2.0V, CE ≥ V
a
= 25
o
c and not 100% tested.
dd
Data Retention Mode
CE ≥ V
– 0.2V
DD
- 0.2V
(2.4V-3.6V)
Options
Com.
Auto.
Ind.
Min.
2.0
t
—
—
rc
0
t
RDR
Typ.
0.5
—
—
—
—
(1)
Max.
3.6
15
—
—
5
6
Unit
mA
ns
ns
V
11
1
2
3
4
5
6
7
8
9
10
11
12