IS61WV12816EDBLL-10TLI ISSI, IS61WV12816EDBLL-10TLI Datasheet - Page 7

• Manufacturer Part Number: IS61WV12816EDBLL-10TLI
• Description: SRAM 2Mb (128K x 16) 10ns 2.4V-3.6V
• Manufacturer: ISSI

Specifications of IS61WV12816EDBLL-10TLI

• Rohs: yes
• Memory Size: 2 Mbit
• Organization: 128 Kbit x 16
• Access Time: 10 ns
• Supply Voltage - Max: 3.6 V
• Supply Voltage - Min: 2.4 V
• Maximum Operating Current: 35 mA
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 40 C
• Mounting Style: SMD/SMT
• Package / Case: TSOP-44
• Memory Type: Asynchronous CMOS
• Factory Pack Quantity: 135

IS61/64WV12816EDBLL
Integrated Silicon Solution, Inc. — www.issi.com
Rev. A
09/29/2011
READ CYCLE NO. 2
Notes:
1. WE is HIGH for a Read Cycle.
2. The device is continuously selected. OE, CE, UB, or LB = V
3. Address is valid prior to or coincident with CE LOW transition.
AC WAVEfORMS
READ CYCLE NO. 1
ADDRESS
ADDRESS
LB, UB
Current
Supply
D
D
V
OUT
OUT
OE
CE
DD
(1,3)
(1,2)
HIGH-Z
(Address Controlled) (CE = OE = V
t
LZCE
PREVIOUS DATA VALID
t
LZB
t
PU
t
AA
50%
t
DOE
t
t
LZOE
t
ACE
BA
t
OHA
IL
t
.
RC
t
IL
t
RC
, UB or LB = V
AA
t
DATA VALID
RC
t
HZCE
IL
)
t
DATA VALID
PD
t
t
t
t
OHA
HZB
HZOE
OHA
50%
UB_CEDR2.eps
READ1.eps
I
I
CC
SB
7
1
2
3
4
5
6
7
8
9
10
11
12