IS61WV12816EDBLL-10TLI ISSI, IS61WV12816EDBLL-10TLI Datasheet - Page 9

• Manufacturer Part Number: IS61WV12816EDBLL-10TLI
• Description: SRAM 2Mb (128K x 16) 10ns 2.4V-3.6V
• Manufacturer: ISSI

Specifications of IS61WV12816EDBLL-10TLI

• Rohs: yes
• Memory Size: 2 Mbit
• Organization: 128 Kbit x 16
• Access Time: 10 ns
• Supply Voltage - Max: 3.6 V
• Supply Voltage - Min: 2.4 V
• Maximum Operating Current: 35 mA
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 40 C
• Mounting Style: SMD/SMT
• Package / Case: TSOP-44
• Memory Type: Asynchronous CMOS
• Factory Pack Quantity: 135

IS61/64WV12816EDBLL
AC WAVEfORMS
WRITE CYCLE NO. 1
WRITE CYCLE NO. 2
Integrated Silicon Solution, Inc. — www.issi.com
Rev. A
09/29/2011
Notes:
1. WRITE is an internally generated signal asserted during an overlap of the LOW states on the CE and WE inputs and at least
2. WRITE = (CE)
one of the LB and UB inputs being in the LOW state.
ADDRESS
ADDRESS
[
(LB) = (UB)
UB, LB
UB, LB
D
D
OUT
WE
OUT
D
WE
CE
D
OE
CE
IN
IN
(CE Controlled, OE is HIGH or LOW)
(WE Controlled. OE is HIGH During Write Cycle)
LOW
]
(WE).
t
SA
DATA UNDEFINED
DATA UNDEFINED
t
SA
VALID ADDRESS
t
t
t
HZWE
AW
HZWE
t
VALID ADDRESS
AW
t
t
t
t
PWE1
PWE2
PWE1
WC
t
t
SCE
t
WC
t
PWB
PWB
(1 )
HIGH-Z
HIGH-Z
t
t
SD
DATA
SD
DATA
IN
IN
VALID
(1,2)
VALID
t
t
HD
t
HD
t
LZWE
LZWE
t
t
HA
HA
UB_CEWR1.eps
UB_CEWR2.eps
9
1
2
3
4
5
6
7
8
9
10
11
12