CY14B101LA-SP45XI Cypress Semiconductor Corp, CY14B101LA-SP45XI Datasheet - Page 13

• Manufacturer Part Number: CY14B101LA-SP45XI
• Description: IC NVSRAM 1MBIT 45NS 48SSOP
• Manufacturer: Cypress Semiconductor Corp
• Type: NVSRAMr

Specifications of CY14B101LA-SP45XI

• Format - Memory: RAM
• Memory Type: NVSRAM (Non-Volatile SRAM)
• Memory Size: 1M (128K x 8)
• Speed: 45ns
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: *
• Word Size: 8b
• Organization: 128Kx8
• Density: 1Mb
• Interface Type: Parallel
• Access Time (max): 45ns
• Package Type: SSOP
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 2.7V
• Operating Temp Range: -40C to 85C
• Pin Count: 48
• Mounting: Surface Mount
• Supply Current: 52mA
• Memory Configuration: 128K X 8
• Access Time: 45ns
• Supply Voltage Range: 2.7V To 3.6V
• Memory Case Style: SSOP
• No. Of Pins: 48
• Operating Temperature Range: -40°C To +85°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Notes
Document #: 001-42879 Rev. *K
27. BHE and BLE are applicable for x16 configuration only.
28. If WE is low when CE goes low, the outputs remain in the high impedance state.
29. HSB must remain HIGH during Read and Write cycles.
30. CE or WE must be > V
Data Output
Data Output
Data Input
BHE, BLE
Data Input
BHE, BLE
Address
Address
WE
CE
WE
CE
IH
during address transitions..
Figure 10. SRAM Write Cycle #3: BHE and BLE Controlled
Figure 9. SRAM Write Cycle #2: CE Controlled
t
SA
t
SA
t
AW
t
PWE
t
SCE
t
High Impedance
BW
High Impedance
t
t
Address Valid
BW
PWE
t
SCE
Address Valid
t
t
SD
WC
t
Input Data Valid
WC
t
SD
Input Data Valid
t
HA
[27, 28, 29, 30]
t
t
HD
HD
t
HA
[27, 28, 29, 30]
CY14B101NA
CY14B101LA
Page 13 of 26
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