CY7C1370D-200BGXC Cypress Semiconductor Corp, CY7C1370D-200BGXC Datasheet - Page 22

• Manufacturer Part Number: CY7C1370D-200BGXC
• Description: IC SRAM 18MBIT 200MHZ 119BGA
• Manufacturer: Cypress Semiconductor Corp
• Type: Synchronousr

Specifications of CY7C1370D-200BGXC

• Memory Size: 18M (512K x 36)
• Package / Case: 119-BGA
• Format - Memory: RAM
• Memory Type: SRAM - Synchronous
• Speed: 200MHz
• Interface: Parallel
• Voltage - Supply: 3.135 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Access Time: 3 ns
• Maximum Clock Frequency: 200 MHz
• Supply Voltage (max): 3.6 V
• Supply Voltage (min): 3.135 V
• Maximum Operating Current: 300 mA
• Maximum Operating Temperature: + 70 C
• Minimum Operating Temperature: 0 C
• Mounting Style: SMD/SMT
• Number Of Ports: 4
• Operating Supply Voltage: 3.3 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Switching Waveforms
NOP,STALL and DESELECT Cycles
ZZ Mode Timing
Notes
Document Number: 38-05558 Rev. *H
29. For this waveform ZZ is tied LOW.
30. When CE is LOW, CE
31. The Ignore Clock Edge or Stall cycle (Clock 3) illustrated CEN being used to create a pause. A write is not performed during this cycle
32. Device must be deselected when entering ZZ mode. See cycle description table for all possible signal conditions to deselect the device.
33. I/Os are in high Z when exiting ZZ sleep mode.
In-Out (DQ)
ADDRESS
ADV/LD
Data
BWx
CEN
CLK
WE
CE
ALL INPUTS
(except ZZ)
Outputs (Q)
I
SUPPLY
WRITE
D(A1)
CLK
1
A1
ZZ
[32, 33]
1
is LOW, CE
Q(A2)
READ
A2
2
2
(continued)
is HIGH and CE
t
ZZI
t
I
ZZ
DDZZ
STALL
3
[29, 30, 31]
3
is LOW. When CE is HIGH, CE
D(A1)
READ
Q(A3)
A3
4
DON’T CARE
Q(A2)
WRITE
D(A4)
DON’T CARE
A4
5
High-Z
1
is HIGH or CE
STALL
6
Q(A3)
2
UNDEFINED
NOP
is LOW or CE
DESELECT or READ Only
7
t RZZI
t
ZZREC
Q(A5)
D(A4)
READ
3
A5
is HIGH.
8
DESELECT
CY7C1370DV25
CY7C1372DV25
9
CONTINUE
DESELECT
Q(A5)
Page 22 of 29
10
t
CHZ
[+] Feedback