CY7C1250V18-333BZC Cypress Semiconductor Corp, CY7C1250V18-333BZC Datasheet - Page 13

• Manufacturer Part Number: CY7C1250V18-333BZC
• Description: IC SRAM 36MBIT 333MHZ 165TFBGA
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1250V18-333BZC

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous, DDR II
• Memory Size: 36M (1M x 36)
• Speed: 333MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 165-TFBGA
• Lead Free Status / RoHS Status: Contains lead / RoHS compliant by exemption

TAP Controller Block Diagram
TAP Electrical Characteristics
Over the Operating Range
Notes
Document Number: 001-06348 Rev. *E
V
V
V
V
V
V
I
10. These characteristics apply to the TAP inputs (TMS, TCK, TDI and TDO). Parallel load levels are specified in
11. Overshoot: V
12. All voltage refers to ground.
X
OH1
OH2
OL1
OL2
IH
IL
TDI
Parameter
TCK
TMS
IH
(AC) < V
Output HIGH Voltage
Output HIGH Voltage
Output LOW Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input and Output Load Current
Selection
Circuitry
DDQ
+ 0.3V (pulse width less than t
[10, 11, 12]
Description
108
31
Boundary Scan Register
30
.
Identification Register
CYC
Instruction Register
TAP Controller
/2). Undershoot: V
29
.
.
.
.
.
I
I
I
I
GND ≤ V
IL
OH
OH
OL
OL
(AC) >
Bypass Register
2
2
2
= 2.0 mA
= 100 μA
= −2.0 mA
= −100 μA
Test Conditions
−
1
1
1
0.3V (pulse width less than t
I
≤ V
0
0
0
0
DD
“Electrical Characteristics” on page
0.65V
–0.3
Selection
Circuitry
Min
CYC
1.4
1.6
−5
/2).
DD
V
0.35V
DD
Max
CY7C1248V18
CY7C1250V18
0.4
0.2
5
+ 0.3
DD
18.
Page 13 of 24
TDO
Unit
μA
V
V
V
V
V
V
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