CY7C1250V18-333BZC Cypress Semiconductor Corp, CY7C1250V18-333BZC Datasheet - Page 23

• Manufacturer Part Number: CY7C1250V18-333BZC
• Description: IC SRAM 36MBIT 333MHZ 165TFBGA
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1250V18-333BZC

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous, DDR II
• Memory Size: 36M (1M x 36)
• Speed: 333MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 165-TFBGA
• Lead Free Status / RoHS Status: Contains lead / RoHS compliant by exemption

Document History Page
Document Number: 001-06348 Rev. *E
Document Title: CY7C1248V18/CY7C1250V18, 36-Mbit DDR-II+ SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency)
Document Number: 001-06348
REV.
*C
*D
*A
*B
*E
**
ECN No.
1093183
2198506
2755831
425689
461639
497628
Submission
08/25/2009
See ECN
See ECN
See ECN
See ECN
See ECN
Date
VKN/AESA Added footnote# 19 related to I
VKN/AESA Removed x8 and x9 part number details
Change
Orig. of
NXR
NXR
NXR
VKN
New Data Sheet
Changed the V
Converted from preliminary to final
Revised the MPNs from
CY7C1257AV18 to CY7C1257V18
CY7C1248AV18 to CY7C1248V18
CY7C1250AV18 to CY7C1250V18
Changed t
t
AC Switching Characteristics table
Modified Power-Up waveform
in Operating Range table and in the DC Electrical Characteristics table
Added foot note in page# 1
Changed the Maximum rating of Ambient Temperature with Power Applied
from –10°C to +85°C to –55°C to +125°C
Changed V
teristics table and in the note below the table
Updated foot note #17 to specify Overshoot and Undershoot Spec
Updated Θ
Removed x9 part and its related information
Updated footnote #24
Added x8 and x9 parts
Updated logic block diagram for x18 and x36 parts
Changed I
mA for 333 MHz, 725 mA to 1000 mA for 300 MHz
Changed I
mA for 333 MHz, 250 mA to 290 mA for 300 MHz
Changed Θ
Changed t
Updated Ordering Information table
Included Soft Error Immunity Data
Modified Ordering Information table by including parts that are available and
modified the disclaimer for the Ordering information.
TDIH
, t
CH
from 10 ns to 5 ns and changed t
DD
TH
SB
CYC
JA
REF
JA
and t
values from 925 mA to 1210 mA for 375 MHz, 800 mA to 1080
and Θ
values from 290 mA to 320 mA for 375 MHz, 270 mA to 300
value from 12.43 °C/W to 16.25 °C/W
DDQ
max spec to 8.4 ns for all speed bins
(Max.) spec from 0.85V to 0.95V in the DC Electrical Charac-
TL
operating voltage to 1.4V to V
JC
from 40 ns to 20 ns, changed t
values
Description of Change
DD
TDOV
from 20 ns to 10 ns in TAP
DD
TMSS
in the Features section,
CY7C1248V18
CY7C1250V18
, t
TDIS
Page 23 of 24
, t
CS
, t
TMSH
,
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