CY7C1250V18-333BZC Cypress Semiconductor Corp, CY7C1250V18-333BZC Datasheet - Page 18

• Manufacturer Part Number: CY7C1250V18-333BZC
• Description: IC SRAM 36MBIT 333MHZ 165TFBGA
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1250V18-333BZC

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous, DDR II
• Memory Size: 36M (1M x 36)
• Speed: 333MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 165-TFBGA
• Lead Free Status / RoHS Status: Contains lead / RoHS compliant by exemption

Maximum Ratings
Exceeding maximum ratings may impair the useful life of the
device. These user guidelines are not tested.
Storage Temperature ................................ –65°C to + 150°C
Ambient Temperature with Power Applied. –55°C to + 125°C
Supply Voltage on V
Supply Voltage on V
DC Applied to Outputs in High-Z ......... –0.5V to V
DC Input Voltage
Current into Outputs (LOW)......................................... 20 mA
Static Discharge Voltage (MIL-STD-883, M 3015).... >2001V
Latch up Current..................................................... >200 mA
Operating Range
Electrical Characteristics
Over the Operating Range
DC Electrical Characteristics
Notes
Document Number: 001-06348 Rev. *E
Com’l
Ind’l
V
V
V
V
V
V
V
V
I
I
V
I
15. Power up: assumes a linear ramp from 0V to V
16. Outputs are impedance controlled. I
17. Outputs are impedance controlled. I
18. V
19. The operation current is calculated with 50% read cycle and 50% write cycle.
X
OZ
DD
Parameter
Range
DD
DDQ
OH
OL
OH(LOW)
OL(LOW)
IH
IL
REF
[19]
REF
(min) = 0.68V or 0.46V
–40°C to +85°C
Temperature
0°C to +70°C
Power Supply Voltage
I/O Supply Voltage
Output HIGH Voltage
Output LOW Voltage
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage Current
Output Leakage Current
Input Reference Voltage
V
Ambient
DD
[11]
Operating Supply
............................... –0.5V to V
DD
DDQ
Description
Relative to GND .......–0.5V to + 2.9V
Relative to GND ..... –0.5V to + V
DDQ
[12]
, whichever is larger. V
OH
OL
= (V
1.8 ± 0.1V
= –(V
V
DD
DDQ
DDQ
[18]
[15]
DD
/2)/(RQ/5) for values of 175Ω < RQ < 350Ω.
/2)/(RQ/5) for values of 175Ω < RQ < 350Ω.
(min) within 200 ms. During this time V
Note 16
Note 17
I
I
GND ≤ V
GND ≤ V
Typical Value = 0.75V
V
f = f
OH
OL
DD
REF
= 0.1 mA, Nominal Impedance
MAX
= –0.1 mA, Nominal Impedance
DDQ
1.4V to V
= Max., I
(max) = 0.95V or 0.54V
DD
V
DDQ
= 1/t
+ 0.3V
+ 0.3V
I
I
≤ V
≤ V
Test Conditions
[15]
DD
CYC
OUT
DD
DDQ
DDQ,
= 0 mA,
Output Disabled
Neutron Soft Error Immunity
DDQ
LSBU
LMBU
SEL
* No LMBU or SEL events occurred during testing; this column represents a
statistical χ
cation Note AN 54908 “Accelerated Neutron SER Testing and Calculation of
Terrestrial Failure Rates”
Parameter
, whichever is smaller.
IH
300 MHz
333 MHz
375 MHz
< V
DD
2
, 95% confidence limit calculation. For more details refer to Appli-
and V
Single Event
Description
DDQ
Single-Bit
Latch up
Multi-Bit
Logical
Logical
V
V
Upsets
Upsets
DDQ
DDQ
V
< V
V
DDQ
REF
–0.15
DD
0.68
Min
V
1.7
1.4
/2 – 0.12
/2 – 0.12
–2
–2
.
SS
+ 0.1
– 0.2
Test Con-
ditions
25°C
25°C
85°C
0.75
Typ
1.5
1.8
CY7C1248V18
CY7C1250V18
V
V
V
Typ
320
DDQ
DDQ
V
0
0
DDQ
REF
V
1000
1080
1210
Max
0.95
V
/2 + 0.12
/2 + 0.12
1.9
0.2
DDQ
DD
2
2
+ 0.15
– 0.1
Page 18 of 24
Max*
0.01
368
0.1
Unit
Unit
FIT/
FIT/
FIT/
Dev
mA
mA
mA
Mb
Mb
μA
μA
V
V
V
V
V
V
V
V
V
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