CY7C1520JV18-300BZXC Cypress Semiconductor Corp, CY7C1520JV18-300BZXC Datasheet - Page 20

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CY7C1520JV18-300BZXC

Manufacturer Part Number
CY7C1520JV18-300BZXC
Description
IC SRAM 72MBIT 300MHZ 165TFBGA
Manufacturer
Cypress Semiconductor Corp
Datasheet

Specifications of CY7C1520JV18-300BZXC

Format - Memory
RAM
Memory Type
SRAM - Synchronous, DDR II
Memory Size
72M (2M x 36)
Speed
300MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.9 V
Operating Temperature
0°C ~ 70°C
Package / Case
165-TFBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CY7C1520JV18-300BZXC
Manufacturer:
Cypress Semiconductor Corp
Quantity:
10 000
Maximum Ratings
Exceeding maximum ratings may impair the useful life of the
device. These user guidelines are not tested.
Storage Temperature ................................. –65°C to + 150°C
Ambient Temperature with Power Applied.... –10°C to +85°C
Supply Voltage on V
Supply Voltage on V
DC Applied to Outputs in High-Z .........–0.5V to V
DC Input Voltage
Electrical Characteristics
DC Electrical Characteristics
Over the Operating Range
AC Electrical Characteristics
Over the Operating Range
Notes
V
V
V
V
V
V
V
V
I
I
V
I
I
V
V
15. Power up: assumes a linear ramp from 0V to V
16. Outputs are impedance controlled. I
17. Outputs are impedance controlled. I
18. V
Document Number: 001-12559 Rev. *C
X
OZ
DD
SB1
Parameter
Parameter
DD
DDQ
OH
OL
OH(LOW)
OL(LOW)
IH
IL
REF
IH
IL
REF
(min) = 0.68V or 0.46V
Power Supply Voltage
IO Supply Voltage
Output HIGH Voltage
Output LOW Voltage
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage Current
Output Leakage Current
Input Reference Voltage
V
Automatic Power down
Current
Input HIGH Voltage
Input LOW Voltage
DD
[11]
Operating Supply
DD
DDQ
.............................. –0.5V to V
Description
Description
Relative to GND ....... –0.5V to +2.9V
Relative to GND ...... –0.5V to +V
DDQ
[12]
[11]
, whichever is larger, V
OH
OL
= (V
= –(V
DDQ
DDQ
[18]
DD
/2)/(RQ/5) for values of 175: < RQ < 350:.
/2)/(RQ/5) for values of 175: < RQ < 350:.
(min) within 200 ms. During this time V
Note 16
Note 17
I
I
GND d V
GND d V
Typical Value = 0.75V
V
I
f = f
Max V
Both Ports Deselected,
V
f = f
OH
OL
OUT
DD
IN
REF
= 0.1 mA, Nominal Impedance
=0.1 mA, Nominal Impedance
MAX
MAX
t V
= Max,
= 0 mA,
(max) = 0.95V or 0.54V
DDQ
DD
DD
IH
= 1/t
= 1/t
I
I
,
or V
d V
d V
+ 0.3V
+ 0.3V
Test Conditions
Test Conditions
CYC
CYC
DDQ
DDQ,
IN
DD
d V
, Inputs Static
Output Disabled
IL
DDQ
Current into Outputs (LOW)......................................... 20 mA
Static Discharge Voltage (MIL-STD-883, M 3015).... >2001V
Latch up Current..................................................... >200 mA
Operating Range
Commercial
Industrial
, whichever is smaller.
IH
Range
< V
DD
CY7C1516JV18, CY7C1527JV18
CY7C1518JV18, CY7C1520JV18
and V
(x18)
(x36)
(x18)
(x36)
(x8)
(x9)
(x8)
(x9)
DDQ
Temperature (T
V
V
< V
–40°C to +85°C
0°C to +70°C
DDQ
DDQ
V
V
V
DDQ
DD
REF
REF
Ambient
–0.3
0.68
.
Min
V
Min
/2 – 0.12
/2 – 0.12
1.7
1.4
5
5
SS
+ 0.1
+ 0.2
– 0.2
A
0.75
Typ
Typ
)
1.8
1.5
1.8 ± 0.1V
V
V
V
DD
DDQ
DDQ
V
V
V
DDQ
REF
REF
[15]
V
1035
1035
1045
1055
Max
0.95
Max
V
410
410
415
415
1.9
/2 + 0.12
/2 + 0.12
0.2
DDQ
5
5
DD
– 0.1
– 0.2
+ 0.3
Page 20 of 26
V
1.4V to
DDQ
V
DD
Unit
Unit
mA
mA
PA
PA
[15]
V
V
V
V
V
V
V
V
V
V
V
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