SST25VF032B-80-4I-S2AF Microchip Technology, SST25VF032B-80-4I-S2AF Datasheet

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SST25VF032B-80-4I-S2AF

Manufacturer Part Number
SST25VF032B-80-4I-S2AF
Description
IC FLASH SER 32M 80MHZ SPI 8SOIC
Manufacturer
Microchip Technology

Specifications of SST25VF032B-80-4I-S2AF

Memory Type
FLASH
Memory Size
32M (4M x 8)
Operating Temperature
-40°C ~ 85°C
Package / Case
8-SOIC (5.3mm Width), 8-SOP, 8-SOEIAJ
Format - Memory
FLASH
Speed
80MHz
Interface
SPI Serial
Voltage - Supply
2.7 V ~ 3.6 V
Data Bus Width
8 bit
Interface Type
SPI
Supply Voltage (max)
3.6 V
Supply Voltage (min)
2.7 V
Maximum Operating Current
25 mA
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

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FEATURES:
• Single Voltage Read and Write Operations
• Serial Interface Architecture
• High Speed Clock Frequency
• Superior Reliability
• Low Power Consumption:
• Flexible Erase Capability
• Fast Erase and Byte-Program:
• Auto Address Increment (AAI) Word Programming
PRODUCT DESCRIPTION
The SST 25 series Serial Flash family features a four-wire,
SPI-compatible interface that allows for a low pin-count
package which occupies less board space and ultimately
lowers total system costs. SST25VF032B SPI serial flash
memories are manufactured with SST’s proprietary, high-
performance CMOS SuperFlash technology. The split-gate
cell design and thick-oxide tunneling injector attain better
reliability and manufacturability compared with alternate
approaches.
The SST25VF032B devices significantly improve perfor-
mance and reliability, while lowering power consumption.
The devices write (Program or Erase) with a single power
©2009 Silicon Storage Technology, Inc.
S71327-03-000
1
– 2.7-3.6V
– SPI Compatible: Mode 0 and Mode 3
– 80 MHz Max
– Endurance: 100,000 Cycles (typical)
– Greater than 100 years Data Retention
– Active Read Current: 10 mA (typical)
– Standby Current: 5 µA (typical)
– Uniform 4 KByte sectors
– Uniform 32 KByte overlay blocks
– Uniform 64 KByte overlay blocks
– Chip-Erase Time: 35 ms (typical)
– Sector-/Block-Erase Time: 18 ms (typical)
– Byte-Program Time: 7 µs (typical)
– Decrease total chip programming time over
Byte-Program operations
05/09
SST25VF032B32Mb Serial Peripheral Interface (SPI) flash memory
32 Mbit SPI Serial Flash
SST25VF032B
The SST logo and SuperFlash are registered Trademarks of Silicon Storage Technology, Inc.
• End-of-Write Detection
• Hold Pin (HOLD#)
• Write Protection (WP#)
• Software Write Protection
• Temperature Range
• Packages Available
• All devices are RoHS compliant
supply of 2.7-3.6V for SST25VF032B. The total energy
consumed is a function of the applied voltage, current, and
time of application. Since for any given voltage range, the
SuperFlash technology uses less current to program and
has a shorter erase time, the total energy consumed during
any Erase or Program operation is less than alternative
flash memory technologies.
The SST25VF032B device is offered in 8-lead SOIC (200
mils) and 8-contact WSON packages. See Figure 2 for pin
assignments.
– Software polling the BUSY bit in Status Register
– Busy Status readout on SO pin
– Suspends a serial sequence to the memory
– Enables/Disables the Lock-Down function of the
– Write protection through Block-Protection bits in
– Industrial: -40°C to +85°C
– 8-lead SOIC (200 mils)
– 8-contact WSON (5 X 6 mm)
without deselecting the device
status register
status register
These specifications are subject to change without notice.
Data Sheet

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SST25VF032B-80-4I-S2AF Summary of contents

Page 1

... Erase or Program operation is less than alternative flash memory technologies. The SST25VF032B device is offered in 8-lead SOIC (200 mils) and 8-contact WSON packages. See Figure 2 for pin assignments. The SST logo and SuperFlash are registered Trademarks of Silicon Storage Technology, Inc. ...

Page 2

... Note AAI mode, the SO pin can act as a RY/BY# pin when configured as a ready/busy status pin. See “End-of- Write Detection” on page 11 for details FIGURE 1: Functional Block Diagram ©2009 Silicon Storage Technology, Inc Decoder Control Logic Serial Interface SCK SI SO WP# HOLD Mbit SPI Serial Flash SST25VF032B SuperFlash Memory Y - Decoder I/O Buffers and Data Latches 1327 B1.0 S71327-03-000 05/09 ...

Page 3

... Mbit SPI Serial Flash SST25VF032B PIN DESCRIPTION CE Top View WP 1327 8-SOIC P1.0 Notes AAI mode, the SO pin can act as a RY/BY# pin when configured as a ready/busy status pin. See “End-of- Write Detection” on page 11 for details. FIGURE 2: Pin Assignments for 8-Lead SOIC ...

Page 4

... Serial Data Input (SI), Serial Data Output (SO), and Serial Clock (SCK). The SST25VF032B supports both Mode 0 (0,0) and Mode 3 (1,1) of SPI bus operations. The difference between the two modes, as shown in Figure 3, is the state of the SCK signal when the bus master is in Stand-by mode and no data is being transferred ...

Page 5

... HOLD# Active FIGURE 4: Hold Condition Waveform Write Protection SST25VF032B provides software Write protection. The Write Protect pin (WP#) enables or disables the lock-down function of the status register. The Block-Protection bits (BP3, BP2, BP1, BP0, and BPL) in the status register pro- vide Write protection to the memory array and the status register ...

Page 6

... Power- Auto Address Increment (AAI) The Auto Address Increment Programming-Status bit pro- vides status on whether the device is in AAI programming mode or Byte-Program mode. The default at power up is Byte-Program mode. 6 SST25VF032B Read/Write R R R/W R/W R/W R/W R R/W T3.0 1327 S71327-03-000 05/09 ...

Page 7

... Lock-Down (BPL) bit. When BPL is set prevents any further alteration of the BPL, BP3, BP2, BP1, and BP0 bits. When the WP# pin is driven high (V effect and its value is “Don’t Care”. After power-up, the BPL bit is reset to 0. SST25VF032B FOR 2 Status Register Bit BP3 ...

Page 8

... Data Sheet INSTRUCTIONS Instructions are used to read, write (Erase and Program), and configure the SST25VF032B. The instruction bus cycles are 8 bits each for commands (Op Code), data, and addresses. The Write-Enable (WREN) instruction must be executed prior any Byte-Program, Auto Address Increment (AAI) programming, Sector-Erase, Block-Erase, Write-Sta- tus-Register, or Chip-Erase instructions ...

Page 9

... Mbit SPI Serial Flash SST25VF032B Read (25 MHz) The Read instruction, 03H, supports MHz Read. The device outputs the data starting from the specified address location. The data output stream is continuous through all addresses until terminated by a low to high tran- sition on CE#. The internal address pointer will automati- cally increment until the highest memory address is reached ...

Page 10

... The user may poll the Busy bit in the software status register or wait T self-timed Byte-Program operation. See Figure 7 for the Byte-Program sequence ADD. ADD. HIGH IMPEDANCE 10 32 Mbit SPI Serial Flash SST25VF032B -A ]. Following the 23 0 for the completion of the internal ADD. IN MSB LSB 1327 F08 ...

Page 11

... Mbit SPI Serial Flash SST25VF032B Auto Address Increment (AAI) Word-Program The AAI program instruction allows multiple bytes of data to be programmed without re-issuing the next sequential address location. This feature decreases total program- ming time when multiple bytes or entire memory array programmed ...

Page 12

... Check for Flash Busy Status to load next valid Wait T or poll Software Status BP register to load next valid Mbit SPI Serial Flash SST25VF032B WRDI RDSR n-1 n Last 2 WDRI to exit Data Bytes AAI Mode Wait command Software Status register to load any command 1327 AAI.HW.0 ...

Page 13

... Mbit SPI Serial Flash SST25VF032B Sector-Erase The Sector-Erase instruction clears all bits in the selected 4 KByte sector to FFH. A Sector-Erase instruction applied to a protected memory area will be ignored. Prior to any Write operation, the Write-Enable (WREN) instruction must be executed. CE# must remain active low for the duration of any command sequence ...

Page 14

... ADDR MSB MSB HIGH IMPEDANCE ADDR ADDR MSB MSB HIGH IMPEDANCE 14 32 Mbit SPI Serial Flash SST25VF032B ), remaining address bits can X CE# must be driven high before the instruction -A ]. Address bits [ are used remaining address bits can X CE# must be driven high before the instruction ...

Page 15

... Mbit SPI Serial Flash SST25VF032B Chip-Erase The Chip-Erase instruction clears all bits in the device to FFH. A Chip-Erase instruction will be ignored if any of the memory area is protected. Prior to any Write operation, the Write-Enable (WREN) instruction must be executed. CE# must remain active low for the duration of the Chip-Erase instruction sequence ...

Page 16

... WRDI instruction. CE# must be driven high before the WRDI instruction is executed. CE# MODE SCK MODE MSB HIGH IMPEDANCE SO 1327 F19.0 must be driven low before the EWSR instruction is entered and must be driven high before the EWSR instruction is executed Mbit SPI Serial Flash SST25VF032B after execut- BP S71327-03-000 05/09 ...

Page 17

... Mbit SPI Serial Flash SST25VF032B Write-Status-Register (WRSR) The Write-Status-Register instruction writes new values to the BP3, BP2, BP1, BP0, and BPL bits of the status regis- ter. CE# must be driven low before the command sequence of the WRSR instruction is entered and driven high before the WRSR instruction is executed. See Figure 19 for EWSR or WREN and WRSR instruction sequences ...

Page 18

... Data Sheet Read-ID (RDID) The Read-ID instruction (RDID) identifies the device as SST25VF032B and manufacturer as SST. The device information can be read from executing an 8-bit command, 90H or ABH, followed by address bits [A the Read-ID instruction, the manufacturer’ located in address 00000H and the device ID is located in address ...

Page 19

... SST25VF032B JEDEC Read-ID The JEDEC Read-ID instruction identifies the device as SST25VF032B and the manufacturer as SST. The device information can be read from executing the 8-bit command, 9FH. Following the JEDEC Read-ID instruction, the 8-bit manufacturer’s ID, BFH, is output from the device. After that, a 24-bit device ID is shifted out on the SO pin ...

Page 20

... CE µA CE µ GND µ GND to V OUT 100 µ 0 1 -100 µ Mbit SPI Serial Flash SST25VF032B +0.5V DD +2. EST = /0.9 V @25 MHz open DD DD /0.9 V @66 MHz open DD DD /0.9 V @80 MHz open Max Max Min DD Max DD ...

Page 21

... Mbit SPI Serial Flash SST25VF032B TABLE 10: Capacitance (T = 25° Mhz, other pins open) A Parameter Description 1 C Output Pin Capacitance OUT 1 C Input Capacitance IN 1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. ...

Page 22

... FIGURE 22: Serial Input Timing Diagram CE# T SCKH SCK T CLZ SO SI FIGURE 23: Serial Output Timing Diagram ©2009 Silicon Storage Technology, Inc SCKR T SCKL T OH MSB Mbit SPI Serial Flash SST25VF032B T CPH T T CHS CEH T SCKF LSB HIGH-Z 1327 F23.0 T CHZ LSB 1327 F24.0 S71327-03-000 05/09 ...

Page 23

... Mbit SPI Serial Flash SST25VF032B CE# SCK SO SI HOLD# FIGURE 24: Hold Timing Diagram Max DD Chip selection is not allowed. All commands are rejected by the device. V Min DD FIGURE 25: Power-up Timing Diagram ©2009 Silicon Storage Technology, Inc HHS HHH HLS T HLH PU-READ Device fully accessible ...

Page 24

... V HT REFERENCE POINTS for a logic “1” and V (0.1V DD ILT DD ) and V (0.4V ). Input rise and fall times (10 Mbit SPI Serial Flash SST25VF032B V HT OUTPUT V LT 1327 IORef.0 ) for a logic “0”. Measurement reference points ↔ 90%) are <5 ns. Note Test HT HIGH Test ...

Page 25

... XX XX XXX X - Valid combinations for SST25VF032B SST25VF032B-66-4I-S2AF SST25VF032B-80-4I-S2AF SST25VF032B-80-4I-QAE Note: Valid combinations are those products in mass production or will be in mass production. Consult your SST sales representative to confirm availability of valid combinations and to determine availability of new combinations. ©2009 Silicon Storage Technology, Inc S2A F ...

Page 26

... FIGURE 27: 8-lead Small-outline Integrated Circuit (SOIC) 200 mil body width (5.2mm x 8mm) SST Package Code: S2A ©2009 Silicon Storage Technology, Inc. 32 Mbit SPI Serial Flash SIDE VIEW 0.50 0.35 1.27 BSC 0.25 END VIEW 0.05 2.16 1.75 0.25 0.19 08-soic-EIAJ-S2A-3 26 SST25VF032B 0˚ 8˚ 0.80 0.50 1mm S71327-03-000 05/09 ...

Page 27

... Mbit SPI Serial Flash SST25VF032B TOP VIEW Pin #1 Corner 6.00 ± 0.10 Note: 1. All linear dimensions are in millimeters (max/min). 2. Untoleranced dimensions (shown with box surround) are nominal target dimensions. 3. The external paddle is electrically connected to the die back-side and possibly to certain V This paddle can be soldered to the PC board; ...

Page 28

... Silicon Storage Technology, Inc. • 1171 Sonora Court • Sunnyvale, CA 94086 • Telephone 408-735-9110 • Fax 408-735-9036 ©2009 Silicon Storage Technology, Inc. Description www.SuperFlash.com or www.sst.com 28 32 Mbit SPI Serial Flash SST25VF032B Date Oct 2006 Mar 2008 Jul 2008 May 2009 S71327-03-000 ...

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