IDT70V9269S12PRFI IDT, Integrated Device Technology Inc, IDT70V9269S12PRFI Datasheet

IC SRAM 256KBIT 12NS 128TQFP

IDT70V9269S12PRFI

Manufacturer Part Number
IDT70V9269S12PRFI
Description
IC SRAM 256KBIT 12NS 128TQFP
Manufacturer
IDT, Integrated Device Technology Inc
Datasheet

Specifications of IDT70V9269S12PRFI

Format - Memory
RAM
Memory Type
SRAM - Dual Port, Synchronous
Memory Size
256K (16K x 16)
Speed
12ns
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
128-TQFP, 128-VQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
70V9269S12PRFI
800-1399

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IDT70V9269S12PRFI
Manufacturer:
IDT
Quantity:
881
Part Number:
IDT70V9269S12PRFI
Manufacturer:
IDT, Integrated Device Technology Inc
Quantity:
10 000
I/O
Features:
Functional Block Diagram
NOTE:
1. A
©2008 Integrated Device Technology, Inc.
I/O
FT
8L
True Dual-Ported memory cells which allow simultaneous
access of the same memory location
High-speed clock to data access
– Commercial: 6.5/7.5/9/12/15ns (max.)
– Industrial: 7.5ns (max.)
Low-power operation
– IDT70V9279/69S
– IDT70V9279/69L
Flow-through or Pipelined output mode on either port via
the FT/PIPE pin
Counter enable and reset features
CE
CE
0L
/PIPE
-I/O
14
-I/O
R/
X
0L
1L
Active: 429mW (typ.)
Standby: 3.3mW (typ.)
Active: 429mW (typ.)
Standby: 1.32mW (typ.)
UB
OE
LB
is a NC for IDT70V9269.
W
15L
7L
CNTRST
L
L
L
L
L
CNTEN
A
CLK
ADS
14L
A
(1)
0L
L
L
L
L
0/1
0/1
1
0
1b 0b
b
Counter/
Address
Reg.
a
1a 0a
HIGH-SPEED 3.3V
32/16K x 16
SYNCHRONOUS
DUAL-PORT STATIC RAM
Control
I/O
MEMORY
ARRAY
1
Dual chip enables allow for depth expansion without
additional logic
Full synchronous operation on both ports
– 4ns setup to clock and 1ns hold on all control, data,
– Data input, address, and control registers
– Fast 6.5ns clock to data out in the Pipelined output mode
– Self-timed write allows fast cycle time
– 10ns cycle time, 100MHz operation in Pipelined output mode
Separate upper-byte and lower-byte controls for
multiplexed bus and bus matching compatibility
LVTTL- compatible, single 3.3V (±0.3V) power supply
Industrial temperature range (–40°C to +85°C) is
Available in a 128-pin Thin Quad Flatpack (TQFP) package
Green parts available, see ordering information
available for selected speeds
Control
and address inputs
I/O
Counter/
Address
0a 1a
Reg.
a
b
0b 1b
IDT70V9279/69S/L
0/1
1
0
0/1
OCTOBER 2008
3743 drw 01
R/
UB
LB
OE
I/O
FT
I/O
A
A
CLK
ADS
CNTEN
CNTRST
14R
0R
W
R
/PIPE
R
R
8R
CE
CE
0R
R
DSC 3743/11
R
R
-I/O
(1)
-I/O
0R
1R
R
R
15R
R
7R
,

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IDT70V9269S12PRFI Summary of contents

Page 1

... Features: True Dual-Ported memory cells which allow simultaneous access of the same memory location High-speed clock to data access – Commercial: 6.5/7.5/9/12/15ns (max.) – Industrial: 7.5ns (max.) Low-power operation – IDT70V9279/69S Active: 429mW (typ.) Standby: 3.3mW (typ.) – IDT70V9279/69L Active: 429mW (typ.) Standby: 1.32mW (typ.) ...

Page 2

... High-Speed 32/16K x 16 Dual-Port Synchronous Static RAM Description: The IDT70V9279/ high-speed 32/16K x 16 bit synchronous Dual-Port RAM. The memory array utilizes Dual-Port memory cells to allow simultaneous access of any address from both ports. Registers on control, data, and address inputs provide minimal setup and hold times. ...

Page 3

IDT70V9279/69S/L High-Speed 32/16K x 16 Dual-Port Synchronous Static RAM Pin Names Left Port Right Port CE CE Chip Enables CE CE 0L, 1L 0R, 1R R/W R/W Read/Write Enable Output Enable L R (1) (1) A ...

Page 4

IDT70V9279/69S/L High-Speed 32/16K x 16 Dual-Port Synchronous Static RAM Truth Table II—Address Counter Control Previous Internal External Internal Address Address Address Used CLK ↑ ↑ ↑ ...

Page 5

IDT70V9279/69S/L High-Speed 32/16K x 16 Dual-Port Synchronous Static RAM DC Electrical Characteristics Over the Operating Temperature and Supply Voltage Range Symbol Parameter ( Input Leakage Current Output Leakage Current LO V Output Low Voltage OL ...

Page 6

IDT70V9279/69S/L High-Speed 32/16K x 16 Dual-Port Synchronous Static RAM DC Electrical Characteristics Over the Operating Temperature Supply Voltage Range Symbol Parameter Test Condition I Dynamic CE and Operating Outputs Disabled, (1) Current (Both MAX ...

Page 7

IDT70V9279/69S/L High-Speed 32/16K x 16 Dual-Port Synchronous Static RAM AC Test Conditions Input Pulse Levels Input Rise/Fall Times Input Timing Reference Levels Output Reference Levels Output Load DATA OUT 435Ω Figure 1. AC Output Test load. , tCD 1 tCD ...

Page 8

IDT70V9279/69S/L High-Speed 32/16K x 16 Dual-Port Synchronous Static RAM AC Electrical Characteristics Over the Operating Temperature Range (Read and Write Cycle Timing) Symbol t Clock Cycle Time (Flow-Through) CYC1 (2) t Clock Cycle Time (Pipelined) CYC2 t Clock High Time ...

Page 9

IDT70V9279/69S/L High-Speed 32/16K x 16 Dual-Port Synchronous Static RAM AC Electrical Characteristics Over the Operating Temperature Range (Read and Write Cycle Timing) Symbol t Clock Cycle Time (Flow-Through) CYC1 t Clock Cycle Time (Pipelined) CYC2 t Clock High Time (Flow-Through) ...

Page 10

IDT70V9279/69S/L High-Speed 32/16K x 16 Dual-Port Synchronous Static RAM Timing Waveform of Read Cycle for Flow-through Output (3,7) (FT/PIPE = V ) "X" CH1 CLK UB, ...

Page 11

IDT70V9279/69S/L High-Speed 32/16K x 16 Dual-Port Synchronous Static RAM Timing Waveform of a Bank Select Pipelined Read t CYC2 t CH2 CLK ADDRESS (B1 0(B1) DATA OUT(B1 ...

Page 12

IDT70V9279/69S/L High-Speed 32/16K x 16 Dual-Port Synchronous Static RAM Timing Waveform with Port-to-Port Flow-Through Read CLK "A" R/W "A" ADDRESS "A" MATCH t SD DATA IN "A" VALID CLK "B" R/W "B" ADDRESS "B" DATA OUT ...

Page 13

... Output state (High, Low, or High-impedance) is determined by the previous cycle control signals UB, LB, and ADS = V , CNTEN, and CNTRST = Addresses do not have to be accessed sequentially since ADS = V reference use only. 5. "NOP" is "No Operation." Data in memory at the selected address may be corrupted and should be re-written to guarantee data integrity. t CL2 ...

Page 14

... Output state (High, Low, or High-impedance) is determined by the previous cycle control signals UB, LB, and ADS = V , CNTEN, and CNTRST = Addresses do not have to be accessed sequentially since ADS = V reference use only. 5. "NOP" is "No Operation." Data in memory at the selected address may be corrupted and should be re-written to guarantee data integrity. t CL1 ...

Page 15

IDT70V9279/69S/L High-Speed 32/16K x 16 Dual-Port Synchronous Static RAM Timing Waveform of Pipelined Read with Address Counter Advance t CYC2 t t CH2 CL2 CLK ADDRESS t t SAD HAD ADS CNTEN ( ...

Page 16

IDT70V9279/69S/L High-Speed 32/16K x 16 Dual-Port Synchronous Static RAM Timing Waveform of Write with Address Counter Advance (Flow-Through or Pipelined Outputs) t CYC2 t CH2 CLK ADDRESS (3) INTERNAL An ADDRESS t t SAD HAD ...

Page 17

... LOW to HIGH transition of the clock signal. An asynchronous output enable is provided to ease asynchronous bus interfacing. Counter enable inputs are also provided to staff the operation of the address counters for fast interleaved memory applications. A HIGH LOW on CE for one clock cycle will power down ...

Page 18

IDT70V9279/69S/L High-Speed 32/16K x 16 Dual-Port Synchronous Static RAM Ordering Information XXXXX Device Power Speed Package Type NOTE: 1. Contact your local sales office for industrial temp. range for other speeds, packages and powers. 2. Green parts ...

Page 19

IDT70V9279/69S/L High-Speed 32/16K x 16 Dual-Port Synchronous Static RAM Datasheet Document History 01/12/99: Initiated datasheet document history Converted to new format Cosmetic and typographical corrections Added additional notes to pin configurations Page 14 Added Depth & Width Expansion section 06/15/99: ...

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