CY7C1418BV18-167BZC Cypress Semiconductor Corp, CY7C1418BV18-167BZC Datasheet - Page 4

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CY7C1418BV18-167BZC

Manufacturer Part Number
CY7C1418BV18-167BZC
Description
IC SRAM 36MBIT 167MHZ 165TFBGA
Manufacturer
Cypress Semiconductor Corp
Datasheet

Specifications of CY7C1418BV18-167BZC

Format - Memory
RAM
Memory Type
SRAM - Synchronous, DDR II
Memory Size
36M (2M x 18)
Speed
167MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.9 V
Operating Temperature
0°C ~ 70°C
Package / Case
165-TFBGA
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CY7C1418BV18-167BZC
Manufacturer:
Cypress Semiconductor Corp
Quantity:
10 000
Pin Definitions
Document Number: 001-07033 Rev. *H
DQ
LD
BWS
BWS
BWS
BWS
A, A0
R/W
C
C
K
K
CQ
CQ
ZQ
Pin Name
[x:0]
0
1
2
3
,
,
,
Input Output-
Synchronous
Synchronous
Synchronous
Synchronous
Synchronous
Output Clock CQ Referenced with Respect to C. This is a free running clock and is synchronized to the input clock
Output Clock CQ Referenced with Respect to C. This is a free running clock and is synchronized to the input clock
Input Clock
Input Clock
Input Clock
Input Clock
Input-
Input-
Input-
Input-
Input
I/O
Data Input Output Signals. Inputs are sampled on the rising edge of K and K clocks during valid write
operations. These pins drive out the requested data during a read operation. Valid data is driven out on
the rising edge of both the C and C clocks during read operations or K and K when in single clock mode.
When read access is deselected, Q
CY7C1418BV18  DQ
CY7C1420BV18  DQ
Synchronous load. This input is brought LOW when a bus cycle sequence is defined. This definition
includes address and read/write direction. All transactions operate on a burst of 2 data. LD must meet
the setup and hold times around edge of K.
Byte Write Select 0, 1, 2, and 3  Active LOW. Sampled on the rising edge of the K and K clocks during
write operations. Used to select which byte is written into the device during the current portion of the write
operations. Bytes not written remain unaltered.
CY7C1418BV18 BWS
CY7C1420BV18 BWS
controls D
All the Byte Write Selects are sampled on the same edge as the data. Deselecting a Byte Write Select
ignores the corresponding byte of data and it is not written into the device .
Address Inputs. These address inputs are multiplexed for both read and write operations. Internally, the
device is organized as 2M x 18 (2 arrays each of 1M x 18) for CY7C1418BV18, and 1M x 36 (2 arrays
each of 512K x 36) for CY7C1420BV18.
CY7C1418BV18 – A0 is the input to the burst counter. These are incremented in a linear fashion internally.
21 address inputs are needed to access the entire memory array.
CY7C1420BV18 – A0 is the input to the burst counter. These are incremented in a linear fashion internally.
20 address inputs are needed to access the entire memory array. All the address inputs are ignored when
the appropriate port is deselected.
Synchronous Read or Write Input. When LD is LOW, this input designates the access type (read when
R/W is HIGH, write when R/W is LOW) for loaded address. R/W must meet the setup and hold times
around edge of K.
Positive Input clock for Output Data. C is used in conjunction with C to clock out the read data from
the device. Use the C and C together to deskew the flight times of various devices on the board back to
the controller. See
Negative Input Clock for Output Data . C is used in conjunction with C to clock out the read data from
the device. Use the C and C together to deskew the flight times of various devices on the board back to
the controller. See
Positive Input Clock Input. The rising edge of K is used to capture synchronous inputs to the device
and to drive out data through Q
edge of K.
Negative Input Clock Input. K is used to capture synchronous data being presented to the device and
to drive out data through Q
for output data (C) of the DDR II. In the single clock mode, CQ is generated with respect to K. The timing
for the echo clocks is shown in the
for output data (C) of the DDR II. In the single clock mode, CQ is generated with respect to K. The timing
for the echo clocks is shown in the
Output Impedance Matching Input. This input is used to tune the device outputs to the system data bus
impedance. CQ, CQ, and Q
between ZQ and ground. Alternatively, connect this pin directly to V
impedance mode. This pin cannot be connected directly to GND or left unconnected.
[35:27]
.
Application Example
Application Example
[17:0]
[35:0]
0
0
controls D
controls D
[x:0]
[x:0]
when in single clock mode.
[x:0]
output impedance are set to 0.2 x RQ, where RQ is a resistor connected
Switching Characteristics
Switching Characteristics
when in single clock mode. All accesses are initiated on the rising
[x:0]
[8:0]
[8:0]
are automatically tristated.
, BWS
on page 7 for further details.
on page 7 for further details.
and BWS
Pin Description
1
controls D
1
controls D
[17:9]
on page 21.
on page 21.
[17:9].
, BWS
DDQ
2
controls D
, which enables the minimum
CY7C1418BV18
CY7C1420BV18
[26:18],
and BWS
Page 4 of 27
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