IRGP4640DPBF International Rectifier, IRGP4640DPBF Datasheet - Page 4

• Manufacturer Part Number: IRGP4640DPBF
• Description: IGBT Transistors 600V UltraFast IGBT 40A 250W 75nC
• Manufacturer: International Rectifier

Specifications of IRGP4640DPBF

• Rohs: yes
• Collector- Emitter Voltage Vceo Max: 600 V
• Collector-emitter Saturation Voltage: 1.9 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 40 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 125 W
• Maximum Operating Temperature: + 175 C
• Package / Case: TO-247
• Continuous Collector Current Ic Max: 65 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole

Fig. 7 - Typ. IGBT Output Characteristics
90
80
70
60
50
40
30
20
10
20
18
16
14
12
10
20
18
16
14
12
10
0
8
6
4
2
0
8
6
4
2
0
0
5
5
Fig. 11 - Typical V
Fig. 9 - Typical V
V GE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
T
1
J
= 175°C; tp = 80μs
2
T
T
J
J
10
10
= 175°C
= -40°C
3
V GE (V)
V CE (V)
V GE (V)
4
CE
CE
vs. V
vs. V
5
I CE = 12A
I CE = 24A
I CE = 48A
I CE = 12A
I CE = 24A
I CE = 48A
15
15
GE
6
GE
7
20
20
8
Fig. 8 - Typ. Diode Forward Characteristics
120
100
120
100
Fig. 12 - Typ. Transfer Characteristics
80
60
40
20
80
60
40
20
20
18
16
14
12
10
0
0
8
6
4
2
0
0.0
0
5
Fig. 10 - Typical V
V
CE
175°C
= 50V; tp = 10μs
-40°c
25°C
1.0
tp = 80μs
T J = 175°C
10
5
T J = 25°C
T
J
V GE (V)
V GE (V)
= 25°C
V F (V)
CE
I CE = 12A
I CE = 24A
I CE = 48A
2.0
10
15
vs. V
GE
3.0
15
20