IRGP4640DPBF International Rectifier, IRGP4640DPBF Datasheet - Page 6

• Manufacturer Part Number: IRGP4640DPBF
• Description: IGBT Transistors 600V UltraFast IGBT 40A 250W 75nC
• Manufacturer: International Rectifier

Specifications of IRGP4640DPBF

• Rohs: yes
• Collector- Emitter Voltage Vceo Max: 600 V
• Collector-emitter Saturation Voltage: 1.9 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 40 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 125 W
• Maximum Operating Temperature: + 175 C
• Package / Case: TO-247
• Continuous Collector Current Ic Max: 65 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole

V
10000
CC
1000
1000
800
600
400
200
100
45
40
35
30
25
20
15
10
10
= 400V; V
0
5
Fig. 23 - Typ. Capacitance vs. V
Fig. 19 - Typ. Diode I
Fig. 21 - Typ. Diode E
0
0
0
R G = 22
R G = 10
10
V
20
GE
GE
T
= 0V; f = 1MHz
= 15V; I
500
J
20
= 175°C
di F /dt (A/μs)
40
V CE (V)
I F (A)
30
F
= 24A; T
RR
60
RR
1000
vs. di
40
Cies
R G = 100
Cres
Coes
vs. I
R G = 47
80
F
J
50
F
/dt
= 175°C
CE
1500
100
60
4000
3500
3000
2500
2000
1500
1000
500
16
14
12
10
16
14
12
10
Fig. 24 - Typical Gate Charge vs. V
V
8
6
4
8
6
4
2
0
Fig. 22 - V
Fig. 20 - Typ. Diode Q
CC
0
8
0
100
= 400V; V
5 10 15 20 25 30 35 40 45 50 55
V
I
CC
CE
10
Q G , Total Gate Charge (nC)
GE
= 400V; T
= 24A; L = 600μH
47
500
V CES = 300V
V CES = 400V
vs. Short Circuit Time
GE
di F /dt (A/μs)
12
V GE (V)
= 15V; T
48A
22
C
= 25°C
24A
RR
14
12A
1000
vs. di
J
= 175°C
10
16
F
/dt
GE
1500
18
280
240
200
160
120
80
40