IRGP4640DPBF International Rectifier, IRGP4640DPBF Datasheet - Page 7

• Manufacturer Part Number: IRGP4640DPBF
• Description: IGBT Transistors 600V UltraFast IGBT 40A 250W 75nC
• Manufacturer: International Rectifier

Specifications of IRGP4640DPBF

• Rohs: yes
• Collector- Emitter Voltage Vceo Max: 600 V
• Collector-emitter Saturation Voltage: 1.9 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 40 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 125 W
• Maximum Operating Temperature: + 175 C
• Package / Case: TO-247
• Continuous Collector Current Ic Max: 65 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole

0.0001
0.001
0.001
0.01
0.01
0.1
0.1
10
1E-006
1E-006
1
1
D = 0.50
Fig. 27. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
D = 0.50
Fig 26. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
0.05
0.02
0.01
0.20
0.02
0.05
0.10
0.01
0.10
0.20
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
1E-005
SINGLE PULSE
( THERMAL RESPONSE )
0.0001
t 1 , Rectangular Pulse Duration (sec)
t 1 , Rectangular Pulse Duration (sec)
0.0001

0.001
J

J


1
Ci= iRi
J


1
Ci
J

1
Ci= iRi

1
Ci
iRi
R
1
R
iRi
0.001
1
R
1
R
1

2

R
2
2

R
2
2
0.01
R

2
2
R
2
R

3
3

R

C
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
3
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
3


C

Ri (°C/W) i (sec)
Ri (°C/W) i (sec)
0.693
0.621
0.307
0.2568
0.3429
0.01
0.1
0.001222
0.005254
0.038140
0.000311
0.006347
0.1
1