IRGP4640DPBF International Rectifier, IRGP4640DPBF Datasheet - Page 5

• Manufacturer Part Number: IRGP4640DPBF
• Description: IGBT Transistors 600V UltraFast IGBT 40A 250W 75nC
• Manufacturer: International Rectifier

Specifications of IRGP4640DPBF

• Rohs: yes
• Collector- Emitter Voltage Vceo Max: 600 V
• Collector-emitter Saturation Voltage: 1.9 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 40 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 125 W
• Maximum Operating Temperature: + 175 C
• Package / Case: TO-247
• Continuous Collector Current Ic Max: 65 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole

T
J
= 175°C; L = 200μH; V
T
J
= 175°C; L = 200μH; V
1600
1400
1200
1000
1800
1600
1400
1200
1000
800
600
400
200
800
600
400
200
40
35
30
25
20
15
10
0
0
Fig. 15 - Typ. Energy Loss vs. R
0
Fig. 17 - Typ. Diode I
0
0
Fig. 13 - Typ. Energy Loss vs. I
10
10
25
T
E ON
J
20
20
CE
= 175°C
CE
E OFF
R G = 100
50
R G = 47
R G = 22
R G = 10
= 400V, I
= 400V, R
Rg ()
I C (A)
I F (A)
E OFF
30
30
E ON
75
RR
40
40
CE
G
vs. I
= 10; V
= 24A; V
100
F
50
50
C
G
GE
125
GE
60
60
= 15V
= 15V
T
J
T
= 175°C; L = 200μH; V
J
= 175°C; L = 200μH; V
1000
1000
100
100
10
45
40
35
30
25
20
15
10
10
Fig. 16 - Typ. Switching Time vs. R
5
1
Fig. 14 - Typ. Switching Time vs. I
10
Fig. 18 - Typ. Diode I
0
0
t F
td OFF
t R
t R
td OFF
25
25
td ON
20
T
J
CE
CE
td ON
= 175°C
50
50
= 400V, R
= 400V, I
R G ()
R G (
I C (A)
30
RR
75
75
G
CE
vs. R
t F
= 10; V
40
= 24A; V
100
100
G
C
G
GE
125
125
50
GE
= 15V
= 15V