FGH50T65UPD Fairchild Semiconductor, FGH50T65UPD Datasheet - Page 4

• Manufacturer Part Number: FGH50T65UPD
• Description: IGBT Transistors 650 V 100 A 240 W
• Manufacturer: Fairchild Semiconductor

Specifications of FGH50T65UPD

• Rohs: yes
• Collector- Emitter Voltage Vceo Max: 650 V
• Collector-emitter Saturation Voltage: 2.1 V
• Maximum Gate Emitter Voltage: 25 V
• Continuous Collector Current At 25 C: 100 A
• Gate-emitter Leakage Current: 400 nA
• Power Dissipation: 240 W
• Maximum Operating Temperature: + 175 C
• Package / Case: TO-247
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole

©2012 Fairchild Semiconductor Corporation
FGH50T65UPD Rev. C0
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
Figure 3. Typical Saturation Voltage
Figure 5. Saturation Voltage vs. Case
150
120
150
120
90
60
30
90
60
30
0
4
3
2
1
0
25
0
0
Temperature at Variant Current Level
Collector-EmitterCase Temperature, T
Characteristics
Common Emitter
V
T
T
Common Emitter
V
C
C
GE
GE
= 25
= 175
= 15V
= 15V
Collector-Emitter Voltage, V
50
Collector-Emitter Voltage, V
o
C
o
20V
C
2
1
75
15V
100
4
2
I
C
100A
125
50A
= 25A
6
CE
3
CE
T
150
[V]
C
[V]
V
GE
= 25
C
10V
12V
[
= 8V
o
o
C]
C
175
8
4
4
Figure 2. Typical Output Characteristics
Figure 6. Saturation Voltage vs. V
Figure 4. Transfer Characteristics
150
120
150
120
90
60
30
90
60
30
20
16
12
0
8
4
0
0
3
4
0
Common Emitter
V
T
T
C
C
CE
= 25
= 175
= 20V
Collector-Emitter Voltage, V
I
o
C
C
o
Gate-Emitter Voltage, V
= 25A
C
Gate-Emitter Voltage,V
50A
6
8
2
20V
12
9
4
100A
15V
Common Emitter
T
C
GE
GE
= -40
12
16
6
CE
[V]
[V]
T
C
o
[V]
C
= 175
V
GE
GE
12V
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10V
= 8V
o
C
15
20
8