FGH50T65UPD Fairchild Semiconductor, FGH50T65UPD Datasheet - Page 6

• Manufacturer Part Number: FGH50T65UPD
• Description: IGBT Transistors 650 V 100 A 240 W
• Manufacturer: Fairchild Semiconductor

Specifications of FGH50T65UPD

• Rohs: yes
• Collector- Emitter Voltage Vceo Max: 650 V
• Collector-emitter Saturation Voltage: 2.1 V
• Maximum Gate Emitter Voltage: 25 V
• Continuous Collector Current At 25 C: 100 A
• Gate-emitter Leakage Current: 400 nA
• Power Dissipation: 240 W
• Maximum Operating Temperature: + 175 C
• Package / Case: TO-247
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole

©2012 Fairchild Semiconductor Corporation
FGH50T65UPD Rev. C0
Typical Performance Characteristics
Figure 13. Turn-off Characteristics vs.
Figure 15. Turn-off Characteristics vs.
Figure 17. Switching Loss vs.
10000
1000
1000
100
100
10
10
10
10
10
10
10
1
1
5
4
3
2
1
20
20
0
Collector Current
Gate Resistance
Collector Current
t
d(off)
10
t
f
40
40
Collector Current, I
t
Gate Resistance, R
d(off)
t
Collector Current, I
f
Common Emitter
V
T
T
20
GE
C
C
= 25
= 175
= 15V, R
60
60
o
C
o
C
Common Emitter
V
I
T
T
C
Common Emitter
V
T
T
CC
C
C
30
GE
C
C
= 50A
G
= 25
= 175
E
= 25
= 175
G
= 400V, V
C
= 6
on
= 15V, R
C
E
[
[A]
Ω
o
off
[A]
Ω,
o
C
o
]
C
o
C
80
80
V
C
cc
40
GE
G
= 400V
= 6
= 15V
Ω
100
100
50
6
Figure 14. Turn-on Characteristics vs.
Figure 16. Switching Loss vs.
10000
1000
1000
Figure 18. Turn off Switching
100
100
300
100
10
10
1
1
20
0
1
Gate Resistance
Collector-Emitter Voltage, V
10
Collector Current
SOA Characteristics
40
Collector Current, I
Gate Resistance, R
Safe Operating Area
V
GE
10
= 15V, T
Common Emitter
V
T
T
20
GE
C
C
E
= 25
= 175
on
= 15V, R
Common Emitter
V
I
T
T
60
C
CC
C
C
o
= 50A
C
C
= 25
= 175
o
C
= 400V, V
= 175
30
G
o
t
r
C
C
o
100
= 6
C
G
o
[A]
t
E
C
d(on)
[
Ω
off
Ω
,V
80
GE
]
CE
cc
40
= 15V
[V]
= 400V
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1000
100
50