FGH50T65UPD Fairchild Semiconductor, FGH50T65UPD Datasheet - Page 5

• Manufacturer Part Number: FGH50T65UPD
• Description: IGBT Transistors 650 V 100 A 240 W
• Manufacturer: Fairchild Semiconductor

Specifications of FGH50T65UPD

• Rohs: yes
• Collector- Emitter Voltage Vceo Max: 650 V
• Collector-emitter Saturation Voltage: 2.1 V
• Maximum Gate Emitter Voltage: 25 V
• Continuous Collector Current At 25 C: 100 A
• Gate-emitter Leakage Current: 400 nA
• Power Dissipation: 240 W
• Maximum Operating Temperature: + 175 C
• Package / Case: TO-247
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole

©2012 Fairchild Semiconductor Corporation
FGH50T65UPD Rev. C0
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. V
Figure 9. Capacitance Characteristics
Figure 11. SOA Characteristics
30000
1000
1000
0.01
100
100
0.1
30
20
16
12
10
8
4
0
1
0.1
4
1
Common Emitter
V
T
*Notes:
GE
C
1. T
2. T
3. Single Pulse
= 25
= 0V, f = 1MHz
Collector-Emitter Voltage, V
I
C
Collector-Emitter Voltage, V
C
J
o
= 25A
= 175
C
= 25
Gate-Emitter Voltage, V
50A
8
1
o
o
C
C
12
10
DC
100A
10 ms
Common Emitter
T
10
C
1ms
= 25
GE
CE
100
16
GE
100
CE
[V]
[V]
o
C
[V]
μ
s
C
10
C
C
oes
res
ies
μ
s
1000
20
30
5
Figure 8. Saturation Voltage vs. V
Figure 10. Gate charge Characteristics
1000
Figure 12. Turn-on Characteristics vs.
100
15
12
10
20
16
12
9
6
3
0
1
8
4
0
0
0
4
Common Emitter
T
C
= 25
I
C
= 25A
o
10
50
50A
C
Gate-Emitter Voltage, V
t
8
r
Gate Resistance, R
Gate Charge, Q
t
d(on)
Gate Resistance
100
20
12
Common Emitter
V
I
T
T
C
CC
C
C
150
= 50A
30
= 25
= 175
g
100A
200V
= 400V, V
Common Emitter
T
[nC]
G
C
o
C
o
[
= 175
Ω
GE
C
V
]
16
CC
[V]
200
40
GE
GE
o
= 400V
300V
C
= 15V
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250
50
20