FGH50T65UPD Fairchild Semiconductor, FGH50T65UPD Datasheet - Page 9
![no-image](/images/manufacturer_photos/0/2/252/fairchild_semiconductor_sml.jpg)
FGH50T65UPD
Manufacturer Part Number
FGH50T65UPD
Description
IGBT Transistors 650 V 100 A 240 W
Manufacturer
Fairchild Semiconductor
Datasheet
1.FGH50T65UPD.pdf
(10 pages)
Specifications of FGH50T65UPD
Rohs
yes
Collector- Emitter Voltage Vceo Max
650 V
Collector-emitter Saturation Voltage
2.1 V
Maximum Gate Emitter Voltage
25 V
Continuous Collector Current At 25 C
100 A
Gate-emitter Leakage Current
400 nA
Power Dissipation
240 W
Maximum Operating Temperature
+ 175 C
Package / Case
TO-247
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Mechanical Dimensions
TO - 247A03
9
©2012 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FGH50T65UPD Rev. C0