GB100XCP12-227 GeneSiC Semiconductor, GB100XCP12-227 Datasheet - Page 2

• Manufacturer Part Number: GB100XCP12-227
• Description: IGBT Modules 1200V 100A SIC IGBT CoPak
• Manufacturer: GeneSiC Semiconductor

Specifications of GB100XCP12-227

• Rohs: yes
• Product: IGBT Silicon Modules
• Configuration: IGBT-Inverter
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 1.9 V
• Gate-emitter Leakage Current: - 400 nA
• Maximum Operating Temperature: + 175 C
• Package / Case: SOT-227
• Maximum Gate Emitter Voltage: 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: SMD/SMT

Electrical Characteristics at T
IGBT
Gate Threshold Voltage
Collector-Emitter Leakage Current
Gate-Leakage Current
Collector-Emitter Threshold Voltage
Collector-Emitter Slope Resistance
Collector-Emitter Saturation Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Gate Resistance
Gate Charge
Module Lead Resistance
Reverse Bias Safe Operating Area
Short Circuit Current
Short Circuit Duration
Rise Time
Fall Time
Turn On Delay Time
Turn Off Delay Time
Turn-On Energy Loss Per Pulse
Turn-Off Energy Loss Per Pulse
Rise Time
Fall Time
Turn On Delay Time
Turn Off Delay Time
Turn-On Energy Loss Per Pulse
Turn-Off Energy Loss Per Pulse
Free-wheeling Silicon Carbide Diode
Forward Voltage
Threshold Voltage at Diode
Peak Reverse Recovery Current
Reverse Recovery Time
Rise Time
Fall Time
Turn-On Energy Loss Per Pulse
Turn-Off Energy Loss Per Pulse
Reverse Recovery Charge
Rise Time
Fall Time
Turn-On Energy Loss Per Pulse
Turn-Off Energy Loss Per Pulse
Reverse Recovery Charge
Feb 2012
Parameter
j
= 175 °C, unless otherwise specified
http://www.genesicsemi.com/index.php/sic-products/copack
Symbol
RBSOA
V
I
V
R
V
V
I
R
CES,175
R
CES,25
CE(SAT)
R
C
t
t
t
t
I
C
C
CE(TO)
E
E
E
E
E
E
E
E
CE,175
Q
I
Q
Q
GE(th)
d(on)
d(off)
d(on)
d(off)
V
D(TO)
GES
CE,25
I
t
t
rrm
t
t
t
t
t
t
Gint
mod
t
t
oes
sc
sc
rr
ies
res
on
off
on
off
r
on
off
r
on
off
r
f
r
f
f
f
F
G
rr
rr
T
I
V
V
T
V
F
V
j
V
= 175 ºC, R
GE
CE
j
GE
-dI
=175 ºC, R
= 100 A, V
GE
GE
V
VGE(on)
VGE(on)
VGE(on)
= -8..15 V, T
= 0 V, V
= 0 V, V
F
GE(on)
= 0 V, V
V
V
V
V
V
L
V
L
= V
I
/dt = 625 A/µs, T
V
L
V
f = 1 MHz, T
L
I
C
S
S
CC
CC
GE
CC
CC
CC
F
S
T
S
GE
GE
T
T
R
R
= 100 A, V
R
R
= 0.8 µH, T
= 0.8 µH, T
= 100 A, V
j
= 800 V, I
= 0.8 µH, T
= 800 V, I
= 750 V, I
= 800 V, I
= 0.8 µH, T
= 800 V, I
CE
j
c
= 15 V, V
= 25 ºC (175 ºC )
gon
= 15 V, V
gon
= 15 V, V
= 15 V, T
gon
gon
= 25 ºC (175 ºC)
= 25 ºC (175 ºC)
= 15 V, V
= 0 V, V
Conditions
= 15 V, T
, I
V
T
V
CE
GE
GE
= R
= R
T
= R
= R
C
GE
CE
g
g
j
GE
j
=56Ω, V
= 25 ºC
= 25ºC
= 4 mA, T
= 56Ω, V
= 20 V, T
= V
= ±15 V
= 0 V, V
= V
=15 V
goff
goff
goff
goff
j
= 25 ºC (125 °C)
CE
j
GE
C
C
C
C
C
CES
GE(off)
GE(off)
j
GE(off)
GE
= 150 ºC
GE(off)
= 10 Ω,
= 10 Ω,
CES
= 10 Ω,
= 10 Ω,
j
j
j
= 175 ºC
= 175 ºC
= 175 ºC
j
j
= 100 A,
= 100 A,
= 25 ºC
= 100 A,
= 100 A,
= 100 A,
= 25 ºC
= 25 ºC
= 25 V,
= 15 V,
, T
= 0 V,
, T
j
CC
= 175 ºC
= -8 V,
= -8 V,
CC
= -8 V,
R
= -8 V,
j
j
j
=1200 V,
j
= 25 ºC
= 175 ºC
= 175 ºC
= 800 V,
= 25 ºC
= 900 V,
min.
-400
5
GB100XCP12-227
2.08 (3.5)
900 (900)
1.9 (2.2)
Values
0.10
3.15
11.4
8.55
1.39
0.25
14.2
15.7
11.1
21.8
typ.
150
470
254
153
244
488
211
172
240
636
100
148
336
218
113
730
178
268
334
480
6.2
1.1
7.9
tbd
0.8
10
23
2
max.
400
10
7
1
Unit
mA
mA
mΩ
mΩ
mΩ
nC
nC
nA
nC
mJ
mJ
mJ
mJ
nF
nF
nF
μs
ns
ns
ns
μJ
μJ
ns
ns
μJ
μJ
ns
ns
ns
ns
ns
ns
ns
ns
V
V
V
Ω
A
A
V
V
A
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