GB100XCP12-227 GeneSiC Semiconductor, GB100XCP12-227 Datasheet - Page 4

• Manufacturer Part Number: GB100XCP12-227
• Description: IGBT Modules 1200V 100A SIC IGBT CoPak
• Manufacturer: GeneSiC Semiconductor

Specifications of GB100XCP12-227

• Rohs: yes
• Product: IGBT Silicon Modules
• Configuration: IGBT-Inverter
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 1.9 V
• Gate-emitter Leakage Current: - 400 nA
• Maximum Operating Temperature: + 175 C
• Package / Case: SOT-227
• Maximum Gate Emitter Voltage: 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: SMD/SMT

Feb 2012
Figure 7: Typical Hard-Switched IGBT Turn On
Figure 9: Typical Hard-Switched Free-wheeling SiC Diode
Figure 11: Typical Module Energy Losses and Switching
Turn Off Waveforms
Waveforms
Times at IGBT Turn On vs. Temperature
http://www.genesicsemi.com/index.php/sic-products/copack
Figure 8: Typical Hard-Switched IGBT Turn Off
Figure 10: Typical Hard-Switched Free-wheeling SiC Diode
Figure 12: Typical Module Energy Losses and Switching
Waveforms
Turn On Waveforms
Times at IGBT Turn Off vs. Temperature
GB100XCP12-227
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