GB100XCP12-227 GeneSiC Semiconductor, GB100XCP12-227 Datasheet - Page 3

• Manufacturer Part Number: GB100XCP12-227
• Description: IGBT Modules 1200V 100A SIC IGBT CoPak
• Manufacturer: GeneSiC Semiconductor

Specifications of GB100XCP12-227

• Rohs: yes
• Product: IGBT Silicon Modules
• Configuration: IGBT-Inverter
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 1.9 V
• Gate-emitter Leakage Current: - 400 nA
• Maximum Operating Temperature: + 175 C
• Package / Case: SOT-227
• Maximum Gate Emitter Voltage: 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: SMD/SMT

Feb 2012
Figure 3: Typical Transfer Characteristics
Figure 5: Typical FWD Forward Characteristics
Figure 1: Typical Output Characteristics at 25 °C
http://www.genesicsemi.com/index.php/sic-products/copack
Figure 2: Typical Output Characteristics at 175 °C
Figure 4: Typical Blocking Characteristics
Figure 6: Typical Turn On Gate Charge
GB100XCP12-227
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