GB100XCP12-227 GeneSiC Semiconductor, GB100XCP12-227 Datasheet - Page 6

• Manufacturer Part Number: GB100XCP12-227
• Description: IGBT Modules 1200V 100A SIC IGBT CoPak
• Manufacturer: GeneSiC Semiconductor

Specifications of GB100XCP12-227

• Rohs: yes
• Product: IGBT Silicon Modules
• Configuration: IGBT-Inverter
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 1.9 V
• Gate-emitter Leakage Current: - 400 nA
• Maximum Operating Temperature: + 175 C
• Package / Case: SOT-227
• Maximum Gate Emitter Voltage: 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: SMD/SMT

Package Dimensions:
NOTE
1. CONTROLLED DIMENSION IS INCH. DIMENSION IN BRACKET IS MILLIMETER.
2. DIMENSIONS DO NOT INCLUDE END FLASH, MOLD FLASH, MATERIAL PROTRUSIONS
Published by
GeneSiC Semiconductor, Inc.
43670 Trade Center Place Suite 155
Dulles, VA 20166
GeneSiC Semiconductor, Inc. reserves right to make changes to the product specifications and data in this document without notice.
GeneSiC disclaims all and any warranty and liability arising out of use or application of any product. No license, express or implied to any
intellectual property rights is granted by this document.
Unless otherwise expressly indicated, GeneSiC products are not designed, tested or authorized for use in life-saving, medical, aircraft
navigation, communication, air traffic control and weapons systems, nor in applications where their failure may result in death, personal
injury and/or property damage.
Feb 2012
2013/02/08
2012/07/30
2011/01/06
Date
SOT-227
http://www.genesicsemi.com/index.php/sic-products/copack
Revision
2
1
0
Revision History
PACKAGE OUTLINE
Updated Electrical Characteristics
Second generation release
Initial release
Comments
GB100XCP12-227
GA100XCP12-227
Supersedes
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