PSMN2R6-60PSQ NXP Semiconductors, PSMN2R6-60PSQ Datasheet - Page 2

• Manufacturer Part Number: PSMN2R6-60PSQ
• Description: MOSFET N-Channel MOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN2R6-60PSQ

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 60 V
• Continuous Drain Current: 150 A
• Resistance Drain-source Rds (on): 5.6 mOhms
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Fall Time: 58 ns
• Gate Charge Qg: 140 nC
• Power Dissipation: 326 W
• Rise Time: 50 ns
• Typical Turn-off Delay Time: 87 ns

NXP Semiconductors
5. Pinning information
Table 2.
6. Ordering information
Table 3.
7. Marking
Table 4.
8. Limiting values
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
PSMN2R6-60PS
Product data sheet
Pin
Type number
Type number
Symbol
1
2
3
PSMN2R6-60PS
PSMN2R6-60PS
V
V
V
I
I
D
DM
DS
DGR
GS
Symbol Description
G
D
S
Pinning information
Ordering information
Marking codes
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
gate
drain
source
Package
Name
TO-220AB
Description
All information provided in this document is subject to legal disclaimers.
plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
Conditions
T
R
T
T
T
j
mb
mb
mb
Simplified outline
GS
≥ 25 °C; T
5 February 2013
= 25 °C; V
= 100 °C; V
= 25 °C; pulsed; t
= 20 kΩ
N-channel 60 V, 2.6 mΩ standard level MOSFET in SOT78
TO-220AB (SOT78)
Marking code
PSMN2R6-60PS
j
≤ 175 °C
1 2
GS
mb
GS
= 10 V;
3
= 10 V;
p
≤ 10 µs;
Fig. 1
Fig. 1
Fig. 4
Graphic symbol
[1]
[1]
PSMN2R6-60PS
mbb076
G
Min
-
-
-20
-
-
-
© NXP B.V. 2013. All rights reserved
D
S
Version
Max
SOT78
60
60
20
150
150
961
Unit
V
V
V
A
A
A
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