PSMN2R6-60PSQ NXP Semiconductors, PSMN2R6-60PSQ Datasheet - Page 4

• Manufacturer Part Number: PSMN2R6-60PSQ
• Description: MOSFET N-Channel MOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN2R6-60PSQ

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 60 V
• Continuous Drain Current: 150 A
• Resistance Drain-source Rds (on): 5.6 mOhms
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Fall Time: 58 ns
• Gate Charge Qg: 140 nC
• Power Dissipation: 326 W
• Rise Time: 50 ns
• Typical Turn-off Delay Time: 87 ns

NXP Semiconductors
9. Thermal characteristics
Table 6.
PSMN2R6-60PS
Product data sheet
Fig. 3.
Fig. 4.
Symbol
R
R
th(j-mb)
th(j-a)
(A)
(A)
I
I
D
D
10
10
10
Avalanche rating; avalanche current as a function of avalanche time
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
10
-1
1
3
2
10
Thermal characteristics
-1
Parameter
thermal resistance
from junction to
mounting base
thermal resistance
from junction to
ambient
I
I
(A)
(A)
Limit R
Limit R
AL
AL
10
10
10
Conditions
All information provided in this document is subject to legal disclaimers.
Fig. 5
1
3
2
10
vertical in still air
DSon
DSon
-3
1
= V
= V
DS
DS
10
/ I
/ I
5 February 2013
D
D
-2
N-channel 60 V, 2.6 mΩ standard level MOSFET in SOT78
10
-1
DC
DC
(1)
(1)
(2)
(2)
t
AL
1
(ms)
003aak810
10
10
Min
-
-
PSMN2R6-60PS
Typ
0.39
60
© NXP B.V. 2013. All rights reserved
V
DS
t
t
p
p
Max
003aak811
(V)
100 us
100 us
1 ms
1 ms
10 ms
10 ms
100 ms
100 ms
0.46
-
= 10 us
= 10 us
10
2
Unit
K/W
K/W
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