PSMN2R6-60PSQ NXP Semiconductors, PSMN2R6-60PSQ Datasheet - Page 7

• Manufacturer Part Number: PSMN2R6-60PSQ
• Description: MOSFET N-Channel MOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN2R6-60PSQ

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 60 V
• Continuous Drain Current: 150 A
• Resistance Drain-source Rds (on): 5.6 mOhms
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Fall Time: 58 ns
• Gate Charge Qg: 140 nC
• Power Dissipation: 326 W
• Rise Time: 50 ns
• Typical Turn-off Delay Time: 87 ns

NXP Semiconductors
PSMN2R6-60PS
Product data sheet
Fig. 8.
Fig. 10. Sub-threshold drain current as a function of
(A)
I
D
(A)
10
10
10
10
10
10
I
500
400
300
200
100
D
-1
-2
-3
-4
-5
-6
0
Transfer characteristics; drain current as a
function of gate-source voltage; typical values
gate-source voltage
0
0
2
min
T
2
j
= 175 ° C
4
typ
4
T
j
max
= 25 ° C
6
V
All information provided in this document is subject to legal disclaimers.
GS
003aah667
V
003aah028
GS
(V)
(V)
6
8
5 February 2013
N-channel 60 V, 2.6 mΩ standard level MOSFET in SOT78
Fig. 9.
Fig. 11. Drain-source on-state resistance as a function
V
R
(m Ω )
GS(th)
(V)
DSon
15
10
5
4
3
2
1
0
5
0
-60
Gate-source threshold voltage as a function of
junction temperature
T
of drain current; typical values
0
j
= 25 °C; t
100
0
p
5
= 300 μs
max
min
typ
200
60
PSMN2R6-60PS
5.5
120
300
V
GS
© NXP B.V. 2013. All rights reserved
003aah670
003aah027
T
(V) = 10
I
j
D
( ° C)
(A)
8
6
180
400
7 / 13