VS-70MT060WHTAPBF Vishay Semiconductors, VS-70MT060WHTAPBF Datasheet

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VS-70MT060WHTAPBF

Manufacturer Part Number
VS-70MT060WHTAPBF
Description
IGBT Modules 600 Volt 70 Amp Warp2 Speed IGBT
Manufacturer
Vishay Semiconductors
Datasheet

Specifications of VS-70MT060WHTAPBF

Product Category
IGBT Modules
Rohs
yes
Product
IGBT Silicon Modules
Configuration
Dual
Collector- Emitter Voltage Vceo Max
600 V
Continuous Collector Current At 25 C
100 A
Maximum Operating Temperature
+ 150 C
Package / Case
MTP
Maximum Gate Emitter Voltage
+/- 20 V
Minimum Operating Temperature
- 40 C
Mounting Style
Screw
Factory Pack Quantity
105
Revision: 05-Jul-11
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector to emitter voltage
Continuous collector current
Pulsed collector current
Peak switching current
Diode continuous forward current
Peak diode forward current
Gate to emitter voltage
RMS isolation voltage
Maximum power dissipation, IGBT
V
CE(on)
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
I
C
typical at V
at T
V
C
CES
“Half Bridge” IGBT MTP (Warp 2 Speed IGBT), 70 A
= 78 °C
www.vishay.com
GE
= 15 V
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
MTP
For technical questions, contact:
SYMBOL
600 V
2.1 V
70 A
V
V
V
I
I
I
ISOL
P
CM
CES
I
LM
FM
I
C
GE
F
D
T
T
T
Any terminal to case, t = 1 min
T
T
C
C
C
C
C
= 25 °C
= 78 °C
= 78 °C
= 25 °C
= 100 °C
TEST CONDITIONS
1
indmodules@vishay.com
FEATURES
• NPT warp 2 speed IGBT technology with
• HEXFRED
• SMD thermistor (NTC)
• Al
• Very low stay inductance design for high speed operation
• UL pending
• Speed 60 kHz to 150 kHz
• UL approved file E78996
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
BENEFITS
• Optimized for welding, UPS and SMPS applications
• Lower coduction losses and switching losses
• Low EMI, requires less snubbing
• Direct mounting to heatsink
• PCB solderable terminals
positive temperature coefficient
reverse recovery
2
O
3
BDC
www.vishay.com/doc?91000
®
antiparallel diodes with ultrasoft
Vishay Semiconductors
70MT060WHTAPbF
MAX.
2500
± 20
600
100
300
300
200
347
139
70
53
Document Number: 94469
UNITS
W
V
A
V

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VS-70MT060WHTAPBF Summary of contents

Page 1

... Any terminal to case min ISOL ° 100 ° For technical questions, contact: indmodules@vishay.com www.vishay.com/doc?91000 70MT060WHTAPbF Vishay Semiconductors antiparallel diodes with ultrasoft MAX. UNITS 600 V 100 70 300 A 300 53 200 ± 2500 347 W 139 Document Number: 94469 ...

Page 2

... oes 1.0 MHz C res T = 150 ° 300 400 600  For technical questions, contact: indmodules@vishay.com www.vishay.com/doc?91000 70MT060WHTAPbF Vishay Semiconductors MIN. TYP. MAX. UNITS 600 - - V - 2.1 2.4 - 2 ± ...

Page 3

... TEST CONDITIONS Heatsink compound thermal conductivity = 1 W/mK A mounting compound is recommended and the torque should be checked after 3 hours to allow for the spread of the compound. Lubricated threads. 3 For technical questions, contact: indmodules@vishay.com www.vishay.com/doc?91000 70MT060WHTAPbF Vishay Semiconductors MIN. TYP. MAX. UNITS - 30 - k - 4000 ...

Page 4

... THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH 4.0 5.0 0 94469_04 Fig Typical Gate Charge vs. Gate to Emitter Votlage 1000 100 100 120 0 94469_05 Fig Maximum Forward Voltage Drop vs. 10 1.0 0.1 0.01 ...

Page 5

... Fig Typical Reverse Recovery Time vs 100 94469_12 Fig Typical Reverse Recovery Current vs For technical questions, contact: indmodules@vishay.com www.vishay.com/doc?91000 70MT060WHTAPbF Vishay Semiconductors 100 200 300 400 500 600 700 - Collector to Emitter Voltage ( 150 ° ...

Page 6

... THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH 200 125 °C F 800 °C F 600 400 200 100 dI /dt (A/μs) F Fig Typical Stored Charge 0.20 0.001 0.01 0 Rectangular Pulse Duration (s) 1 Characteristics (IGBT) thJC ...

Page 7

... Speed/type (W = Warp IGBT) Circuit configuration (H = Half bridge Thermistor DBC substrate 2 3 Lead (Pb)-free LINKS TO RELATED DOCUMENTS 7 For technical questions, contact: indmodules@vishay.com www.vishay.com/doc?91000 70MT060WHTAPbF Vishay Semiconductors Ω 10 Ω Ω 10 Ω Fig Functional Diagram A PbF 7 8 www.vishay.com/doc?95175 Document Number: 94469 ...

Page 8

... Unused terminals are not assembled in the package Document Number: 95175 Revision: 18-Mar-08 MTP Ø 5 Ø 1.1 31 1.2 ± 0.1 7.2 ± 0.1 7.8 ± 0.1 5.7 ± 0.1 3 ± 0.1 8.7 ± 0.1 6 ± 0.1 8.5 ± 0.1 3 ± 0.1 39.5 ± 0.1 44.5 48.7 1.3 63.5 ± 0.25 For technical questions, contact: indmodules@vishay.com Outline Dimensions Vishay Semiconductors 1.8 5.4 ± 0.1 www.vishay.com 1 ...

Page 9

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), ...

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