VS-70MT060WHTAPBF Vishay Semiconductors, VS-70MT060WHTAPBF Datasheet - Page 5

• Manufacturer Part Number: VS-70MT060WHTAPBF
• Description: IGBT Modules 600 Volt 70 Amp Warp2 Speed IGBT
• Manufacturer: Vishay Semiconductors

Specifications of VS-70MT060WHTAPBF

• Product Category: IGBT Modules
• Rohs: yes
• Product: IGBT Silicon Modules
• Configuration: Dual
• Collector- Emitter Voltage Vceo Max: 600 V
• Continuous Collector Current At 25 C: 100 A
• Maximum Operating Temperature: + 150 C
• Package / Case: MTP
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Factory Pack Quantity: 105

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Revision: 05-Jul-11
94469_08
1400
1200
1000
1000
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
800
600
400
200
100
4.5
4.0
3.5
3.0
2.5
10
Fig. 8 - Typical Energy Losses vs. I
0
0.1
0
0
Fig. 7 - Typical Gate Threshold Voltage
I
I
C
C
- Collector to Emitter Current (A)
- Collector to Emitter Current (A)
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Fig. 9 - Switching Time vs. I
t
f
20
20
E
on
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
25 °C
t
r
E
I
C
off
(mA)
40
40
125 °C
t
d(off)
t
d(on)
60
60
C
( T
For technical questions, contact:
C
J
= 150 °C)
1.0
80
80
5
[e-mail]
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350
300
250
200
150
100
160
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120
100
Fig. 12 - Typical Reverse Recovery Current vs. dI
50
40
35
30
25
20
15
10
80
60
Fig. 11 - Typical Reverse Recovery Time vs. dI
0
5
100
100
0
www.vishay.com/doc?91000
V
Fig. 10 - Reverse BIAS SOA, T
R
I
= 200 V
C
100
- Collector to Emitter Voltage (V)
200
I
F
Vishay Semiconductors
= 70 A, 125 °C
70MT060WHTAPbF
dI
dI
300
F
F
/dt (A/µs)
/dt (A/μs)
I
F
I
400
F
= 70 A, 25 °C
I
= 70 A, 125 °C
F
= 70 A, 25 °C
Document Number: 94469
500
J
V
= 150 °C
R
= 200 V
600
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700
F
/dt
F
/dt