VS-70MT060WHTAPBF Vishay Semiconductors, VS-70MT060WHTAPBF Datasheet - Page 6

• Manufacturer Part Number: VS-70MT060WHTAPBF
• Description: IGBT Modules 600 Volt 70 Amp Warp2 Speed IGBT
• Manufacturer: Vishay Semiconductors

Specifications of VS-70MT060WHTAPBF

• Product Category: IGBT Modules
• Rohs: yes
• Product: IGBT Silicon Modules
• Configuration: Dual
• Collector- Emitter Voltage Vceo Max: 600 V
• Continuous Collector Current At 25 C: 100 A
• Maximum Operating Temperature: + 150 C
• Package / Case: MTP
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Factory Pack Quantity: 105

Revision: 05-Jul-11
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
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(thermal resistance)
(thermal resistance)
Fig. 15 - Maximum Thermal Impedance Z
Fig. 14 - Maximum Thermal Impedance Z
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Single pulse
Single pulse
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For technical questions, contact:
100
V
Fig. 13 - Typical Stored Charge vs. dI
R
0.001
= 200 V
t
t
1
1
- Rectangular Pulse Duration (s)
- Rectangular Pulse Duration (s)
I
F
0.001
= 70 A, 125 °C
I
F
dI
= 70 A, 25 °C
F
/dt (A/μs)
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
0.01
6
D = 0.75
D = 0.50
D = 0.50
D = 0.33
D = 0.25
D = 0.20
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thJC
thJC
0.01
Characteristics (Diode)
Characteristics (IGBT)
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F
/dt
1000
Vishay Semiconductors
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70MT060WHTAPbF
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Document Number: 94469
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