NGTB20N120IHLWG ON Semiconductor, NGTB20N120IHLWG Datasheet - Page 4

• Manufacturer Part Number: NGTB20N120IHLWG
• Description: IGBT Transistors
• Manufacturer: ON Semiconductor

Specifications of NGTB20N120IHLWG

• Rohs: yes
• Collector- Emitter Voltage Vceo Max: 1200 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 40 A
• Power Dissipation: 250 W
• Package / Case: TO-247
• Mounting Style: Through Hole

1000
1000
100
100
16
14
12
10
10
10
8
6
4
2
0
1
1
0
0
V
V
T
Rg = 10 W
V
V
I
Rg = 10 W
10
C
J
CE
GE
CE
GE
Figure 9. Switching Time vs. Temperature
t
= 20 A
d(off)
= 150°C
20
t
f
= 600 V
= 600 V
= 15 V
= 15 V
t
d(off)
14
Figure 11. Switching Time vs. I
t
50
f
Figure 7. Typical Gate Charge
40
Q
18
G
TEMPERATURE (°C)
I
, GATE CHARGE (nC)
C
, COLLECTOR (A)
60
100
22
400 V
80
26
150
100
200 V
30
TYPICAL CHARACTERISTICS
120
600 V
34
200
C
140
38
http://onsemi.com
250
160
42
4
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
3.0
2.5
2.0
1.5
1.0
0.5
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
0
0
5
V
V
T
Rg = 10 W
10
V
V
I
Rg = 10 W
J
C
CE
GE
CE
GE
= 150°C
= 20 A
Figure 8. Energy Loss vs. Temperature
20
15
= 600 V
= 15 V
= 600 V
= 15 V
14
Figure 12. Energy Loss vs. Rg
Figure 10. Energy Loss vs. I
40
25
Rg, GATE RESISTOR (W)
18
TEMPERATURE (°C)
I
C
60
, COLLECTOR (A)
35
22
45
80
26
100
55
30
V
V
I
T
120
C
65
CE
GE
J
34
= 20 A
= 150°C
C
= 600 V
= 15 V
140
75
38
160
85
42