NGTB20N120IHLWG ON Semiconductor, NGTB20N120IHLWG Datasheet - Page 5

• Manufacturer Part Number: NGTB20N120IHLWG
• Description: IGBT Transistors
• Manufacturer: ON Semiconductor

Specifications of NGTB20N120IHLWG

• Rohs: yes
• Collector- Emitter Voltage Vceo Max: 1200 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 40 A
• Power Dissipation: 250 W
• Package / Case: TO-247
• Mounting Style: Through Hole

10,000
1000
1000
100
100
10
10
1
5
375
V
I
Rg = 10 W
T
V
V
I
T
C
C
J
GE
CE
GE
J
= 20 A
= 20 A
= 150°C
= 150°C
425
15
V
= 600 V
= 15 V
= 15 V
CE
t
Figure 15. Switching Time vs. V
d(off)
Figure 13. Switching Time vs. Rg
t
f
, COLLECTOR−EMITTER VOLTAGE (V)
475
25
Rg, GATE RESISTOR (W)
525
35
1000
100
575
45
10
1
1
V
Figure 17. Reverse Bias Safe Operating Area
GE
625
55
= 15 V, T
V
CE
TYPICAL CHARACTERISTICS
675
65
, COLLECTOR−EMITTER VOLTAGE (V)
t
d(off)
t
CE
C
10
f
= 125°C
725
75
http://onsemi.com
775
85
5
100
1000
0.01
100
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.1
10
1
0
1
375
Single Nonrepetitive
Pulse T
Curves must be derated
linearly with increase
in temperature
425
V
V
CE
CE
1000
dc operation
C
Figure 14. Energy Loss vs. V
Figure 16. Safe Operating Area
, COLLECTOR−EMITTER VOLTAGE (V)
, COLLECTOR−EMITTER VOLTAGE (V)
= 25°C
475
10
525
1 ms
575
100
625
50 ms
100 ms
675
V
I
Rg = 10 W
T
C
J
GE
CE
= 20 A
= 150°C
1000
= 15 V
725
775